Datasheet > 1N5245B

1N5245B

更新时间： 2024-09-24 12:51:39

品牌	Logo	应用领域
星合电子 - GXELECTRONICS		二极管测试
页数	文件大小	规格书
2页	203K
描述
Silicon ZâDiodes

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中文翻译

获取价格

数据手册

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1N5245B 数据手册

1N5221B...1N5267B

星合子

Vishay Telefunken

XINGHE ELECTRONICS

Silicon Z–Diodes

Features

Very sharp reverse characteristic

Very high stability

Low reverse current level

V –tolerance ± 5%

Applications

94 9367

Voltage stabilization

Absolute Maximum Ratings

T = 25 C

Parameter

Power dissipation

Z–current

Junction temperature

Storage temperature range

Test Conditions

75 C

Type

Symbol

Value

500

Unit

P /V

200

–65...+200

stg

Maximum Thermal Resistance

T = 25 C

Parameter

Junction ambient

Test Conditions

l=9.5mm (3/8”), T =constant

Symbol

thJA

Value

300

Unit

K/W

Electrical Characteristics

T = 25 C

Parameter

Forward voltage

Test Conditions

I =200mA

Type

Symbol Min

Typ Max Unit

1.1

Dimensions in mm

Cathode Identification

0.55 max.

technical drawings

according to DIN

specifications

1.7 max.

94 9366

Standard Glass Case

54 A 2 DIN 41880

JEDEC DO 35

26 min.

3.9 max.

26 min.

Weight max. 0.3g

GAOMI XINGHE ELECTRONICSCO.,LTD.

WWW.SDDZG.COM TEL:0536-2210359

中文翻译

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