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1N5234B PDF预览

1N5234B

更新时间: 2024-11-29 04:46:07
品牌 Logo 应用领域
TSC 稳压二极管测试PC
页数 文件大小 规格书
2页 48K
描述
Silicon Epitaxial Planar Zener Diodes for Voltage Regulation

1N5234B 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:O-LALF-W2Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.10.00.50
风险等级:5.56外壳连接:ISOLATED
配置:SINGLE二极管元件材料:SILICON
二极管类型:ZENER DIODEJEDEC-95代码:DO-35
JESD-30 代码:O-LALF-W2JESD-609代码:e3
元件数量:1端子数量:2
最高工作温度:200 °C最低工作温度:-65 °C
封装主体材料:GLASS封装形状:ROUND
封装形式:LONG FORM峰值回流温度(摄氏度):NOT SPECIFIED
极性:UNIDIRECTIONAL最大功率耗散:0.5 W
认证状态:Not Qualified标称参考电压:6.2 V
表面贴装:NO技术:ZENER
端子面层:Tin (Sn)端子形式:WIRE
端子位置:AXIAL处于峰值回流温度下的最长时间:NOT SPECIFIED
最大电压容差:5%工作测试电流:20 mA
Base Number Matches:1

1N5234B 数据手册

 浏览型号1N5234B的Datasheet PDF文件第2页 
LESHAN RADIO COMPANY, LTD.  
1N52 SERIES  
ZENER DIODES  
1N52  
1N52 SERIES ZENER DIODES  
1N5221B Through 1N5272B ELECTRICAL CHARACTERISTICS  
(T A =25 C)unless otherwise noted.Based on dc measurements at thermal equillibrium;lead length=3/8”;thermal resistance of heat  
sink=30  
°
°
C/W VFmax=1.1V @ I F=200mA for all types(T A = 25  
°
C
VFmax=1.1V@ I F=200mA  
)
Max Zener Impedance  
A and B Sufflx only  
Max Reverse  
Leakage Current  
Nominal  
Zener  
Voltage  
Vz@LZT  
Volts  
Test  
Current  
I ZT  
Max Zener Voltege  
Temperature Coff  
(A amd Bsuffix only)  
Package  
TYPE  
ZK  
ZK  
Z @I  
R
V
R
I
Dimensions  
Z ZT@I ZT  
Ohms  
mA  
Volts  
B
= 0.25mA  
Ohms  
VZ(%/  
°
C)  
µA  
1N5221B 2.4  
1N5222B 2.5  
1N5223B 2.7  
1N5224B 2.8  
1N5225B 3.0  
1N5226B 3.3  
1N5227B 3.6  
1N5228B 3.9  
1N5229B 4.3  
1N5230B 4.7  
1N5231B 5.1  
1N5232B 5.6  
1N5233B 6.0  
1N5234B 6.2  
1N5235B 6.8  
1N5236B 7.5  
1N5237B 8.2  
1N5238B 8.7  
1N5239B 9.1  
1N5240B 10  
1N5241B 11  
1N5242B 12  
1N5243B 13  
1N5244B 14  
1N5245B 15  
1N5246B 16  
1N5247B 17  
1N5248B 18  
1N5249B 19  
1N5250B 20  
1N5251B 22  
1N5252B 24  
1N5253B 25  
1N5254B 27  
1N5255B 28  
30  
30  
30  
30  
29  
28  
24  
23  
22  
19  
17  
11  
7.0  
7.0  
5.0  
6.0  
8.0  
8.0  
10  
17  
22  
30  
13  
15  
16  
17  
19  
21  
23  
25  
29  
33  
35  
41  
44  
1200  
100  
-0.085  
1250  
1300  
1400  
1600  
1600  
1700  
1900  
2000  
1900  
1600  
1600  
1600  
1000  
750  
100  
75  
-0.085  
-0.08  
20  
20  
20  
20  
1.0  
75  
-0.08  
50  
-0.075  
-0.07  
25  
1.0  
1.0  
1.0  
1.0  
2.0  
2.0  
3.0  
3.5  
4.0  
5.0  
6.0  
6.5  
6.5  
7.0  
8.0  
8.4  
9.1  
9.9  
10  
15  
-0.065  
-0.06  
10  
5.0  
5.0  
5.0  
5.0  
5.0  
5.0  
3.0  
±0.055  
±0.03  
±0.03  
+0.038  
+0.038  
+0.045  
+0.05  
500  
+0.058  
+0.062  
+0.065  
+0.068  
+0.075  
+0.076  
+0.077  
+0.079  
+0.082  
+0.082  
+0.083  
+0.084  
+0.085  
+0.086  
+0.086  
+0.087  
+0.088  
+0.089  
+0.090  
+0.091  
500  
600  
3.0  
600  
600  
DO-35  
(mm)  
20  
2.0  
1.0  
0.5  
0.1  
0.1  
20  
9.5  
9.0  
8.5  
7.8  
7.4  
7.0  
6.6  
6.2  
5.6  
5.2  
5.0  
4.6  
4.5  
600  
600  
600  
11  
12  
13  
0.1  
0.1  
14  
14  
15  
17  
18  
19  
21  
21  
NOTE: The VZ value shown is the center value with tolerance designations  
Vz  
B
C
D
Vz  
Vz  
Vz  
± 5%  
± 2%  
± 1%  
as follows:  
suffix B: VZ ± 5%  
suffix C: VZ ± 2%  
suffix D: VZ ± 1%  
2B–1/2  

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1N5234B(DO-35) MICROSEMI

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1N5234B(DO-35) MCC

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1N5234B(DO-35)P MCC

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1N5234B(DO-35)-TP MCC

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1N5234B153 NXP

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DIODE 6.2 V, 0.4 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-35, Voltage Regula
1N5234B-1TR MICROSEMI

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Zener Diode, 6.2V V(Z), 5%, 0.23W,
1N5234B-1TRE3 MICROSEMI

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Zener Diode, 6.2V V(Z), 5%, 0.23W,
1N5234B-A DIODES

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500mW EPITAXIAL ZENER DIODE