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1N5228B-G PDF预览

1N5228B-G

更新时间: 2024-11-24 01:00:19
品牌 Logo 应用领域
上华 - COMCHIP 测试二极管
页数 文件大小 规格书
4页 84K
描述
Axial Leaded Glass Zener Diode

1N5228B-G 技术参数

是否Rohs认证: 符合生命周期:Active
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.10.00.50风险等级:5.76
配置:SINGLE二极管类型:ZENER DIODE
最大动态阻抗:23 Ω元件数量:1
最高工作温度:175 °C峰值回流温度(摄氏度):NOT SPECIFIED
最大功率耗散:0.5 W标称参考电压:3.9 V
子类别:Voltage Reference Diodes表面贴装:NO
处于峰值回流温度下的最长时间:NOT SPECIFIED最大电压容差:5%
工作测试电流:20 mA

1N5228B-G 数据手册

 浏览型号1N5228B-G的Datasheet PDF文件第2页浏览型号1N5228B-G的Datasheet PDF文件第3页浏览型号1N5228B-G的Datasheet PDF文件第4页 
Axial Leaded Glass Zener Diode  
Comchip  
S M D D i o d e S p e c i a l i s t  
1N5221B-G Thru. 1N5267B-G  
Voltage: 2.4 to 75 Volts  
Power: 0.5 Watts  
RoHS Device  
DO-35  
Features  
-500mW power dissipation  
1.02(26.00) Min.  
-Stabilizing voltage.  
0.165(4.20)Max.  
Mechanical data  
0.079(2.00)Max.  
-Case: Glass, DO-35  
1.02(26.00) Min.  
-Polarity: Indicated by cathode band  
0.022(0.55)Max.  
Dimensions in inches and (millimeter)  
Maximum Ratings (TA=25°C, unless otherwise noted)  
Symbol  
Parameter  
Conditions  
Value  
500  
Unit  
mW  
mA  
Power dissipation  
TL=25°C  
Ptot  
IZ  
Zener current  
Ptot/VZ  
Junction temperature  
Storage temperature range  
TJ  
175  
°C  
°C  
TSTG  
-65 to +175  
Electrical Characteristics (TA=25°C, unless otherwise noted)  
Symbol  
Parameter  
Thermal resistance (Note 1)  
Forward voltage  
Conditions  
Max  
300  
1.1  
Unit  
°C/W  
V
junction to ambient air  
L=4mm, TL=25°C  
RθJA  
IF=200mA  
VF  
Note: Based on dc-measurement at thermal equilibrium; lead length = 9.5 (3/8”); thermal resistance of heat sink =30°C/W  
Company reserves the right to improve product design , functions and reliability without notice.  
REV: C  
Page 1  
QW-BZ001  
Comchip Technology CO., LTD.  

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