Datasheet > 1N5226B

1N5226B

更新时间： 2024-11-26 06:24:51

品牌	Logo	应用领域
平伟 - PINGWEI		二极管齐纳二极管测试局域网
页数	文件大小	规格书
3页	65K
描述
SILICON PLANAR ZENER DIODES

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数据手册

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1N5226B 数据手册

CHONGQING PINGYANG ELECTRONICS CO.,LTD.

1N5221B THRU 1N5272B

SILICON PLANAR ZENER DIODES

FEATURES

·Voltage Range: 2.7V to 110V

·Double siug type construction

DO-41

1.0(25.4)

MIN.

.034(0.9)

.028(0.7)

DIA.

.205(5.2)

.166(4.2)

.107(2.7)

.080(2.0)

MECHANICAL DATA

1.0(25.4)

MIN.

·Case: Molded plastic

·Epoxy: UL94V-0 rate flame retardant

·Lead: MIL-STD- 202E, Method 208 guaranteed

·Polarity:Color band denotes cathode end

·Mounting position: Any

Dimensions in inches and (millimeters)

·Weight: 0.33 grams

MAXIMUM RATINGS AND ELECTRONICAL CHARACTERISTICS

Ratings at 25℃ ambient temperature unless otherwise specified.

Single phase, half wave, 60Hz,resistive or inductive load.

For capacitive load, derate current by 20%.

Absolute Maximum Ratings (T_a=25°C)

VALUE

units

SYMBOL

Zener Current see Table “Characterstics”

0.5¹⁾

150

Power Dissipation at T_amb=25°C

P_tot

T_J

°C

Junction Temperature

¹⁾Valid provided that leads at a distance of 8 mm form case are kept at ambient temperature.

Characteristics at T_amb=25°C

Min.

Typ.

Max.

units

SYMBOL

Forward Voltage at I_F=250mA

V_F

1.2

Valid provided that leads at a distance of 8 mm form case are kept at ambient temperature.

１

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