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1N5226A-AP PDF预览

1N5226A-AP

更新时间: 2024-11-27 08:52:39
品牌 Logo 应用领域
美微科 - MCC 测试二极管
页数 文件大小 规格书
5页 471K
描述
Zener Diode, 3.3V V(Z), 10%, 0.5W, Silicon, Unidirectional, DO-35, ROHS COMPLIANT, GLASS PACKAGE-2

1N5226A-AP 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:DO-35
包装说明:ROHS COMPLIANT, GLASS PACKAGE-2针数:2
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.10.00.50风险等级:5.04
外壳连接:ISOLATED配置:SINGLE
二极管元件材料:SILICON二极管类型:ZENER DIODE
JEDEC-95代码:DO-35JESD-30 代码:O-LALF-W2
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:2
封装主体材料:GLASS封装形状:ROUND
封装形式:LONG FORM峰值回流温度(摄氏度):NOT SPECIFIED
极性:UNIDIRECTIONAL最大功率耗散:0.5 W
认证状态:Not Qualified标称参考电压:3.3 V
表面贴装:NO技术:ZENER
端子面层:Matte Tin (Sn)端子形式:WIRE
端子位置:AXIAL处于峰值回流温度下的最长时间:NOT SPECIFIED
最大电压容差:10%工作测试电流:20 mA

1N5226A-AP 数据手册

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1N5221  
THRU  
1N5267  
M C C  
Micro Commercial Components  
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20736 Marilla Street Chatsworth  
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ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ  
$ꢉ%ꢒꢅ   ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ  
TM  
Features  
Wide Voltage Range Available  
Glass Package  
High Temp Soldering: 260°C for 10 Seconds At Terminals  
500 mW  
Zener Diode  
2.4 to 75 Volts  
Marking : Cathode band and type number  
Lead Free Finish/Rohs Compliant (Note1) ("P"Suffix designates  
Compliant. See ordering information)  
Moisture Sensitivity: Level 1  
Maximum Ratings  
DO-35  
Operating Temperature: -55°C to +150°C  
Storage Temperature: -55°C to +150°C  
500 mWatt DC Power Dissipation  
Power Derating: 4.0mW/°C above 50°C  
Forward Voltage @ 200mA: 1.1 Volts  
Figure 1 - Typical Capacitance  
100  
D
A
Cathode  
Mark  
pf  
B
10  
At zero volts  
D
At –2 Volts VR  
1
C
0
100  
200  
VZ  
Typical Capacitance (pf) – versus – Zener voltage (VZ)  
Figure 2 - Derating Curve  
400  
DIMENSIONS  
mW  
200  
INCHES  
MIN  
---  
MM  
MIN  
DIM  
A
MAX  
.166  
.079  
.020  
---  
MAX  
4.2  
NOTE  
---  
---  
B
---  
2.00  
.52  
C
---  
---  
D
1.000  
25.40  
---  
0
50  
Temperature °C  
Power Dissipation (mW) - Versus - Temperature °C  
100  
150  
Note: 1. Lead in Glass Exemption Applied, see EU Directive Annex 5.  
www.mccsemi.com  
1 of 5  
Revision: A  
2011/01/01  

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