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1N5196UR

更新时间: 2024-09-22 22:25:31
品牌 Logo 应用领域
美高森美 - MICROSEMI 整流二极管
页数 文件大小 规格书
1页 62K
描述
LL-35 High Voltage / Current Low Leakage Glass Diodes

1N5196UR 技术参数

是否Rohs认证:不符合生命周期:Active
零件包装代码:DO-213AA包装说明:HERMETIC SEALED, GLASS PACKAGE-2
针数:2Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.10.00.70
风险等级:5.27Is Samacsys:N
其他特性:METALLURGICALLY BONDED外壳连接:ISOLATED
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODEJEDEC-95代码:DO-213AA
JESD-30 代码:O-LELF-R2JESD-609代码:e0
湿度敏感等级:1元件数量:1
端子数量:2最大输出电流:0.2 A
封装主体材料:GLASS封装形状:ROUND
封装形式:LONG FORM峰值回流温度(摄氏度):NOT SPECIFIED
最大功率耗散:0.5 W认证状态:Not Qualified
表面贴装:YES端子面层:TIN LEAD
端子形式:WRAP AROUND端子位置:END
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

1N5196UR 数据手册

  
1N5194UR  
thru  
LL-35 High Voltage / Current  
Low Leakage Glass Diodes  
1N5196UR  
Use Advantages  
Used in applications where the highest voltage and current performance of  
small signal devices are required.  
In instrument applications for voltage isolation, pulse clipping and glue logic.  
Ideal for use in (Medical, Military and Aero/Space).  
Features  
Six Sigma quality  
Humidity proof glass  
LL-35 MINI MELF  
Package Type DO-213AA  
Metallurgically bonded  
Thermally matched system  
No thermal fatigue  
Both End C aps  
0.10"REF  
High surge capability  
0.016-.022"  
0.41-0.55 mm  
2.54 mm REF  
Sigma Bond™ plated contacts  
100% guaranteed solderability  
Length  
Dia.  
0.13-0.146"  
.063-.067"  
3.30-3.70 mm  
1.6-1.7mm  
Absolute Maximum Ratings  
Symbol  
Ptot  
Value  
500  
Unit  
mW  
Power Dissipation at TAMB= 25 o C  
AverageForwardRectifiedCurrentatTAMB=25o C  
OperatingandStorageTemperatureRange  
Power derating at TAMB =25 oC  
IAV  
200  
mAmps  
oC  
TO&ST  
Pdr  
-55 to 200  
3.0 (Max)  
mW/oC  
Detail Specifications  
Peak  
Inverse  
Voltage Working Voltage  
(MIN.)  
@0.1 mA  
Maximum  
Reverse  
Maximum  
Average Rectified Current  
_______________  
Maximum Forward  
Maximum  
Maximum  
Surge  
Current  
(IFSM)  
Voltage  
Drop  
Reverse Leakage Current  
_______________  
(IR) @ VRWM  
(IO)  
(IO)  
@ IF = 100mA  
(VF)  
(VRMM  
)
25° C  
150° C  
25° C  
150° C  
(NOTE 1)  
Type  
Volts  
Volts  
mAmps  
mAmps  
Volt  
nA  
µA  
Amps  
1N5194  
1N5195  
80  
70  
200  
200  
50  
50  
1.0  
1.0  
25  
25  
5
5
2
2
200  
180  
1N5196  
250  
225  
200  
50  
1.0  
25  
5
2
Note 1: One half cycle, 60 Hz. sine wave.  
6 Lake Street - Lawrence, MA 01841  
Tel: 978-681-0392 - Fax: 978-681-9135  

1N5196UR 替代型号

型号 品牌 替代类型 描述 数据表
JANTXV1N5196UR MICROSEMI

完全替代

Rectifier Diode, 1 Element, 0.2A, Silicon, DO-213AA, GLASS PACKAGE-2
JANTX1N5196UR MICROSEMI

完全替代

Rectifier Diode, 1 Element, 0.2A, Silicon, DO-213AA, GLASS PACKAGE-2

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