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1N5182SME3 PDF预览

1N5182SME3

更新时间： 2024-11-19 15:32:11
品牌 Logo 应用领域
美高森美 - MICROSEMI 二极管
页数 文件大小 规格书
3页 292K
描述
Rectifier Diode, 1 Element, 0.1A, Silicon, HERMETIC SEALED, GLASS, MELF-2

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1N5182SME3 技术参数

生命周期：Active包装说明：HERMETIC SEALED, GLASS, MELF-2
Reach Compliance Code：compliantECCN代码：EAR99
HTS代码：8541.10.00.70风险等级：5.7
其他特性：METALLURGICALLY BONDED外壳连接：ISOLATED
配置：SINGLE二极管元件材料：SILICON
二极管类型：RECTIFIER DIODEJESD-30 代码：O-LELF-R2
元件数量：1端子数量：2
最大输出电流：0.1 A封装主体材料：GLASS
封装形状：ROUND封装形式：LONG FORM
表面贴装：YES端子形式：WRAP AROUND
端子位置：ENDBase Number Matches：1

1N5182SME3 数据手册

 浏览型号1N5182SME3的Datasheet PDF文件第2页浏览型号1N5182SME3的Datasheet PDF文件第3页 
1N3643 thru 1N3647  
1N4254 thru 1n4257  
1N5181 thru 1N5184  
VOIDLESS-HERMETICALLY-SEALED  
S C O T T S D A L E D I V I S I O N  
HIGH VOLTAGE RECTIFIERS  
DESCRIPTION  
APPEARANCE  
These “standard recovery” high voltage rectifier diode series are military qualified to  
MIL-PRF-19500/279 for the 1N3644 thru 1N3647. Others such as the 1N5181 thru  
1N5184 meet or exceed requirements of MIL-PRF-19500/389. They are ideal for  
high-reliability where a failure cannot be tolerated for high voltage applications.  
These 0.10 and 0.25 Amp rated rectifiers at 55ºC for working peak reverse voltages  
from 1000 to 10,000 volts are hermetically sealed with voidless-glass construction  
using an internal “Category I” metallurgical bond. Surface mount MELF package  
configurations are also available by adding “SM” suffix. Microsemi also offers  
numerous other rectifier products to meet higher and lower current ratings with  
various recovery time speed requirements including fast and ultrafast device types  
in both through-hole and surface mount packages.  
S Package  
IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com  
FEATURES  
APPLICATIONS / BENEFITS  
•
JEDEC registered 1N3643 thru 1N3647, 1N4254  
•
High voltage standard recovery rectifiers 1000 to  
thru 1N4257, and 1N5181 thru 1N5187 series  
10,000 V  
•
•
•
•
•
•
•
Voidless Hermetically Sealed Glass Package  
Triple Layer Passivation  
Internal “Category I” Metallurgical bonds  
Lowest Reverse Leakage Available  
Lowest Thermal Resistance Available  
Absolute High Voltage / High Temperature Stability  
•
•
Military and other high-reliability applications  
Applications include bridges, half-bridges, catch  
diodes, voltage multipliers, X-ray machines,  
power supplies, transmitters, and radar  
equipment  
•
•
•
High forward surge current capability  
Extremely robust construction  
1N5181 thru 1N5184 meet or exceed requirements  
Low thermal resistance  
of MIL-S-19500/389  
•
Inherently radiation hard as described in Microsemi  
•
•
1N3644 thru 1N3647 JAN, JANTX types available  
per MIL-S19500/279  
MicroNote 050  
Surface mount equivalents also available in a square  
end-cap MELF configuration with “SM” suffix  
MAXIMUM RATINGS  
MECHANICAL AND PACKAGING  
•
•
Junction & Storage Temperature: -65oC to +175oC  
•
•
CASE: Hermetically sealed voidless hard glass  
Thermal Resistance: 38oC/W junction to lead at 3/8  
inch (10 mm) lead length from body  
Average Rectified Forward Current (IO):  
1N3643 thru 1N3647: 0.250 Amps @ TA = 55ºC  
0.150 Amps @ TA = 100ºC  
1N4254 thru 1N4257: 0.250 Amps @ TA = 55ºC  
0.150 Amps @ TA = 100ºC  
1N5181 thru 1N5184: 0.100 Amps @ TA = 55ºC  
0.060 Amps @ TA = 100ºC  
with Tungsten slugs  
TERMINATIONS: Axial leads are copper with  
Tin/Lead (Sn/Pb) finish  
MARKING: Body paint and part number, etc.  
POLARITY: Cathode band  
TAPE & REEL option: Standard per EIA-296  
WEIGHT: 400 mg (approx)  
See package dimensions on last page  
•
•
•
•
•
•
•
•
Forward Surge Current: See Electrical  
Characteristics for surge at 8.3 ms half-sine wave  
Solder Temperatures: 260ºC for 10 s (maximum)  
Copyright 2004  
Microsemi  
Page 1  
12-29-2004 REV A  
Scottsdale Division  
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503  
123

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