5秒后页面跳转
1N4948GPT PDF预览

1N4948GPT

更新时间: 2024-02-19 16:58:21
品牌 Logo 应用领域
力勤 - CHENMKO 快速恢复二极管
页数 文件大小 规格书
2页 74K
描述
FAST RECOVERY RECTIFIER VOLTAGE RANGE 200 - 1000 Volts CURRENT 1.0 Ampere

1N4948GPT 技术参数

生命周期:Obsolete包装说明:O-XALF-W2
Reach Compliance Code:unknown风险等级:5.23
外壳连接:ISOLATED配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
JESD-30 代码:O-XALF-W2元件数量:1
端子数量:2最大输出电流:1 A
封装主体材料:UNSPECIFIED封装形状:ROUND
封装形式:LONG FORM认证状态:Not Qualified
最大反向恢复时间:0.5 µs表面贴装:NO
端子形式:WIRE端子位置:AXIAL

1N4948GPT 数据手册

 浏览型号1N4948GPT的Datasheet PDF文件第2页 
1N4942GPT  
THRU  
CHENMKO ENTERPRISE CO.,LTD  
GLASS PASSIVATED  
FAST RECOVERY RECTIFIER  
1N4948GPT  
VOLTAGE RANGE 200 - 1000 Volts CURRENT 1.0 Ampere  
FEATURES  
* Plastic package has Underwriters Laboratory  
Flammability Classification 94V-0  
* High switching capability  
* Low leakage  
* Low forward voltage drop  
* High current capability  
DO-41  
* Glass passivated junction  
* High surge current capability  
0.034(0.9)  
DIA.  
0.028(0.7)  
1.0(25.4)  
MIN.  
MECHANICAL DATA  
Case: JEDEC DO-41 molded plastic  
Terminals: Plated axial leads, solderable per MIL-STD-750,  
Method 2026  
Polarity: Color band denotes cathode end  
Mounting Position: Any  
0.205(5.2)  
0.166(4.2)  
0.107(2.7)  
DIA.  
0.080(2.0)  
1.0(25.4)  
MIN.  
Weight: 0.35 gram  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS  
Ratings at 25oC ambient temperature unless otherwise specified.  
Single phase, half wave, 60 HZ, resistive or inductive load.  
For capacitive load, derate current by 20%.  
Dimensions in inches and (millimeters)  
DO-41  
MAXIMUM RATINGES ( At TA = 25oC unless otherwise noted )  
RATINGS  
Maximum Recurrent Peak Reverse Voltage  
Maximum RMS Voltage  
SYMBOL  
VRRM  
1N4946GPT 1N4947GPT  
UNITS  
Volts  
Volts  
Volts  
1N4942GPT1N4944GPT  
1N4948GPT  
1000  
200  
140  
200  
400  
280  
400  
600  
420  
600  
800  
560  
800  
VRMS  
700  
Maximum DC Blocking Voltage  
VDC  
1000  
Maximum Average Forward Current at TA = 55oC  
IO  
1.0  
30  
Amps  
Amps  
Peak Forward Surge Current 8.3 ms single half sine-wave  
superimposed on rated load (JEDEC method)  
IFSM  
Typical Junction Capacitance (Note 1)  
CJ  
15  
pF  
oC  
Operating and Storage Temperature Range  
TJ,STG  
-65 to +175  
ELECTRICAL CHARACTERISTICS ( At TA = 25oC unless otherwise noted )  
1N4946GPT 1N4947GPT  
1.3  
CHARACTERISTICS  
SYMBOL  
UNITS  
Volts  
1N4942GPT1N4944GPT  
1N4948GPT  
Maximum Instantaneous Forward Voltage at 1.0 A DC  
VF  
Maximum DC Reverse Current  
5.0  
uAmps  
uAmps  
at Rated DC Blocking Voltage at TA = 25oC  
IR  
Maximum Full Load Reverse Current Average,  
100  
250  
Full Cycle 0.375" (9.5mm) lead length at TL = 55oC  
Maximum Reverse Recovery Time (Note 2)  
trr  
150  
500  
nSec  
2001-6  
NOTES : 1. Measured at 1.0 MHZ and applied reverse voltage of 4.0 volts  
2. Test Conditions : IF = 0.5 A, IR = -1.0 A, IRR = -0.25 A  

与1N4948GPT相关器件

型号 品牌 获取价格 描述 数据表
1N4948GP-TP MCC

获取价格

Rectifier Diode, 1 Element, 1A, 1000V V(RRM), Silicon, DO-41, ROHS COMPLIANT, PLASTIC PACK
1N4948GP-TP-HF MCC

获取价格

暂无描述
1N4948-GT3 SENSITRON

获取价格

Rectifier Diode, 1 Element, 1A, 1000V V(RRM), Silicon, DO-41, HERMETIC SEALED, GLASS PACKA
1N4948GU02 RECTRON

获取价格

Rectifier Diode, 1 Element, 1A, 1000V V(RRM), Silicon, DO-41
1N4948GU06 RECTRON

获取价格

Rectifier Diode, 1 Element, 1A, 1000V V(RRM), Silicon, DO-41
1N4948H02-1 RECTRON

获取价格

Rectifier Diode, 1 Element, 1A, 600V V(RRM), Silicon, DO-41
1N4948H02-2 RECTRON

获取价格

Rectifier Diode, 1 Element, 1A, 600V V(RRM), Silicon, DO-41
1N4948H02-4 RECTRON

获取价格

Rectifier Diode, 1 Element, 1A, 600V V(RRM), Silicon, DO-41
1N4948H02-5 RECTRON

获取价格

Rectifier Diode, 1 Element, 1A, 600V V(RRM), Silicon, DO-41
1N4948H03-1 RECTRON

获取价格

Rectifier Diode, 1 Element, 1A, 600V V(RRM), Silicon, DO-41