5秒后页面跳转
1N4942G_V01 PDF预览

1N4942G_V01

更新时间: 2024-11-21 01:25:51
品牌 Logo 应用领域
辰达行 - MDD 快速恢复二极管
页数 文件大小 规格书
2页 529K
描述
FAST RECOVERY GLASS PASSIVATED RECTIFIERS

1N4942G_V01 数据手册

 浏览型号1N4942G_V01的Datasheet PDF文件第2页 
1N4942G THRU 1N4948G  
Reverse Voltage - 200 to 1000 Volts Forward Current - 1.0 Ampere  
FAST RECOVERY GLASS PASSIVATED RECTIFIERS  
DO-41  
Features  
The plastic package carries Underwriters Laboratory  
Flammability Classification 94V-0  
Idea for printed circuit board  
1.0 (25.4)  
MIN.  
Fast switching for high efficiency  
Low reverse leakage  
0.107 (2.7)  
0.080 (2.3)  
DIA.  
High forward surge current capability  
High temperature soldering guaranteed  
250/10 seconds at terminals  
0.205(5.2)  
0.166(4.2)  
Mechanical Data  
1.0 (25.4)  
MIN.  
Case : JEDEC DO-41 Molded plastic body  
Terminals : Solder plated, solderable per MIL-STD-750,Method 2026  
Polarity : Polarity symbol marking on body  
Mounting Position: Any  
0.025 (0.65)  
0.021 (0.55)  
DIA.  
Weight  
: 0.012 ounce, 0.33 grams  
Dimensions in inches and (millimeters)  
Maximum Ratings And Electrical Characteristics  
Ratings at 25°C ambient temperature unlss otherwise specified.  
Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%.  
1N4942G 1N4944G 1N4946G 1N4947G 1N4948G  
Parameter  
SYMBOLS  
UNITS  
MDD  
MDD  
MDD  
MDD  
MDD  
Marking Code  
1N4942G 1N4944G 1N4946G 1N4947G 1N4948G  
200  
140  
200  
400  
280  
400  
600  
420  
600  
800  
560  
800  
1000  
V
RMM  
RMS  
Maximum repetitive peak reverse voltage  
Maximum RMS voltage  
V
V
V
700  
V
1000  
Maximum DC blocking voltage  
V
DC  
Maximum average forward rectified current  
at TA=75  
I
(AV)  
1.0  
A
Peak forward surge current  
I
FSM  
8.3ms single half sine-wave  
A
30  
superimposed onrated load (JEDEC Method)  
Maximum instantaneous forward voltage at 1.0A  
V
F
1.30  
V
5.0  
50.0  
Maximum DC reverse current  
at rated DC blocking voltage  
TA=25℃  
μA  
I
R
TA=100℃  
trr  
150  
250  
500  
Maximum reverse recovery time  
(NOTE 1)  
ns  
pF  
15.0  
50.0  
Typical junction capacitance (NOTE 2)  
Typical thermal resistance (NOTE 3)  
C
J
R
θ
JA  
STG  
℃/W  
-65 to +150  
Operating junction and storage temperature range  
J,  
T T  
Note:1.Reverse recovery condition IF=0.5A,IR=1.0A,Irr=0.25A  
2.Measured at 1MHz and applied reverse voltage of 4.0V D.C.  
3.Thermal resistance from junction to ambient at 0.375(9.5mm)lead length,P.C.B. mounted  
DN:T19815A0  
https://www.microdiode.com  
Rev:2019A0  
Page :1  

与1N4942G_V01相关器件

型号 品牌 获取价格 描述 数据表
1N4942G-B RECTRON

获取价格

Rectifier Diode, 1 Element, 1A, 200V V(RRM), Silicon, DO-41, PLASTIC PACKAGE-2
1N4942G-E RECTRON

获取价格

Rectifier Diode, 1 Element, 1A, 200V V(RRM), Silicon, DO-41,
1N4942GH02 RECTRON

获取价格

Rectifier Diode, 1 Element, 1A, 200V V(RRM), Silicon, DO-41,
1N4942GH02-1 RECTRON

获取价格

Rectifier Diode, 1 Element, 1A, 200V V(RRM), Silicon, DO-41,
1N4942GH02-2 RECTRON

获取价格

Rectifier Diode, 1 Element, 1A, 200V V(RRM), Silicon, DO-41,
1N4942GH02-3 RECTRON

获取价格

Rectifier Diode, 1 Element, 1A, 200V V(RRM), Silicon, DO-41,
1N4942GH02-4 RECTRON

获取价格

Rectifier Diode, 1 Element, 1A, 200V V(RRM), Silicon, DO-41,
1N4942GH02-5 RECTRON

获取价格

Rectifier Diode, 1 Element, 1A, 200V V(RRM), Silicon, DO-41,
1N4942GH03 RECTRON

获取价格

Rectifier Diode, 1 Element, 1A, 200V V(RRM), Silicon, DO-41,
1N4942GH03-1 RECTRON

获取价格

Rectifier Diode, 1 Element, 1A, 200V V(RRM), Silicon, DO-41,