Datasheet > 1N4942G_15

1N4942G_15

更新时间： 2024-11-19 01:23:27

品牌	Logo	应用领域
乐山 - LRC		/
页数	文件大小	规格书
7页	199K
描述
Glass Passivated Junction

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中文翻译

获取价格

数据手册

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1N4942G_15 数据手册

LESHAN RADIO COMPANY, LTD.

1N4942G thru 1N4948G

1.Feature & Dimensions

* Plastic package has Underwriters Laboratory

Glass Passivated Junction

Fast Recovery Rectifiers

Flammability Classification 94V-0

* High temperature metallurgically bonded construction

* Cavity-free glass passivated junction

Reverse Voltage 200 to 1000V

Forward Current 1.0A

* Capable of meeting environmental standards of MIL-S-19500

* 1.0 A operation at T_A=75°C with no thermal runaway

* For use in high frequency rectifier circuits

* Fast switching for high efficiency

* Typical IR less than 1.0µA

* High temperature soldering guaranteed:

260°C/10 seconds

* 0.375" (9.5mm) lead length, 5 lbs. (2.3kg) tension

2.Mechanical Data

Case: JEDEC DO-41, molded plastic body

Terminals: Plated axial leads, solderable per

MIL-STD-750, Method 2026

Polarity: Color band denotes cathode end

Mounting Position: Any

Weight: 0.012 oz., 0.34 g

We declare that the material of product

compliance with RoHS requirements.

Handling precautin:None

3.Electrical Characteristic

Maximum Ratings & Thermal Characteristics Ratings at 25°C ambient temperature unless otherwise specified.

1N49 1N49 1N49 1N49 1N49

42G 44G 46G 47G 48G

Parameter Symbol

symbol

V_RRM

Unit

Maximum repetitive peak reverse voltage

Maximum RMS voltage

200

140

200

400

280

400

600

420

600

800 1000

560 700

800 1000

V_RMS

V_DC

Maximum DC blocking voltage

Maximum average forward rectified current

0.375" (9.5mm) lead length at T_A= 75°C

1.0

IF(AV)

Peak forward surge current 8.3ms single half

sine-wave superimposed on rated load (JEDEC

Method)

I_FSM

Typical thermal resistance (Note 2)

RθJA

°C/W

°C

–50 to +150

Operating junction and storage temperature range TJ, TSTG

Electrical Characteristics Ratings at 25°C ambient temperature unless otherwise specified.

1N49 1N49 1N49 1N49 1N49

42G 44G 46G 47G 48G

Parameter Symbol

symbol

V_F

Unit

1.3

Maximum instantaneous forward voltage at 1.0A

5.0

100

Maximum DC reverse current TA = 25°C

at rated DC blocking voltage TA = 125°C

µA

150

250

Typical reverse recovery time (Note 1)

Typical junction capacitance at 4.0V, 1MHz

NOTES:

trr

500

1. IF = 0.5A, IR = 1.0A, IRR = 0.25A

2. Thermal resistance from junction to ambient at 0.375” (9.5mm) lead length, P.C.B. mounted

1/3

12 3 4 5 6 7

中文翻译

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与1N4942G_15相关器件

型号	品牌	获取价格	描述	数据表
1N4942G_V01	MDD	获取价格	FAST RECOVERY GLASS PASSIVATED RECTIFIERS
1N4942G-B	RECTRON	获取价格	Rectifier Diode, 1 Element, 1A, 200V V(RRM), Silicon, DO-41, PLASTIC PACKAGE-2
1N4942G-E	RECTRON	获取价格	Rectifier Diode, 1 Element, 1A, 200V V(RRM), Silicon, DO-41,
1N4942GH02	RECTRON	获取价格	Rectifier Diode, 1 Element, 1A, 200V V(RRM), Silicon, DO-41,
1N4942GH02-1	RECTRON	获取价格	Rectifier Diode, 1 Element, 1A, 200V V(RRM), Silicon, DO-41,
1N4942GH02-2	RECTRON	获取价格	Rectifier Diode, 1 Element, 1A, 200V V(RRM), Silicon, DO-41,
1N4942GH02-3	RECTRON	获取价格	Rectifier Diode, 1 Element, 1A, 200V V(RRM), Silicon, DO-41,
1N4942GH02-4	RECTRON	获取价格	Rectifier Diode, 1 Element, 1A, 200V V(RRM), Silicon, DO-41,
1N4942GH02-5	RECTRON	获取价格	Rectifier Diode, 1 Element, 1A, 200V V(RRM), Silicon, DO-41,
1N4942GH03	RECTRON	获取价格	Rectifier Diode, 1 Element, 1A, 200V V(RRM), Silicon, DO-41,

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