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1N4942_04 PDF预览

1N4942_04

更新时间: 2024-11-06 04:24:27
品牌 Logo 应用领域
美高森美 - MICROSEMI 整流二极管快速恢复二极管
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描述
VOIDLESS-HERMETICALLY SEALED FAST RECOVERY GLASS RECTIFIERS

1N4942_04 数据手册

 浏览型号1N4942_04的Datasheet PDF文件第2页 
1N4942 thru 1N4948  
VOIDLESS-HERMETICALLY SEALED  
FAST RECOVERY GLASS RECTIFIERS  
S C O T T S D A L E D I V I S I O N  
DESCRIPTION  
APPEARANCE  
This “fast recovery” rectifier diode series is military qualified to MIL-PRF-19500/359  
and is ideal for high-reliability applications where a failure cannot be tolerated.  
These industry-recognized 1.0 Amp rated rectifiers for working peak reverse  
voltages from 200 to 1000 volts are hermetically sealed with voidless-glass  
construction using an internal “Category I” metallurgical bond. These devices are  
similar in ratings to the 1N5615 thru 1N5623 series where surface mount MELF  
package configurations are also available by adding a “US” suffix (see separate  
data sheet for 1N5615US thru 1N5623US). Microsemi also offers numerous other  
rectifier products to meet higher and lower current ratings with various recovery time  
speed requirements including fast and ultrafast device types in both through-hole  
and surface mount packages.  
“A” Package  
IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com  
FEATURES  
APPLICATIONS / BENEFITS  
Popular JEDEC registered 1N4942 to 1N4948 series  
Voidless hermetically sealed glass package  
Triple-Layer Passivation  
Internal “Category I” Metallurgical bonds  
Working Peak Reverse Voltage 200 to 1000 Volts.  
Fast recovery 1 Amp rectifiers 200 to 1000 V  
Military and other high-reliability applications  
General rectifier applications including bridges, half-  
bridges, catch diodes, etc.  
High forward surge current capability  
Extremely robust construction  
JAN, JANTX, and JANTXV available per MIL-PRF-  
Low thermal resistance  
19500/359 (for JANS, see 1N5615 thru 1N5623)  
Controlled avalanche with peak reverse power  
Surface mount equivalents also available in a square  
end-cap MELF configuration with “US” suffix (see  
separate data sheet for 1N5615US thru 1N5623US)  
capability  
Inherently radiation hard as described in Microsemi  
MicroNote 050  
MAXIMUM RATINGS  
MECHANICAL AND PACKAGING  
Junction & Storage Temperature: -65oC to +175oC  
CASE: Hermetically sealed voidless hard glass with  
Thermal Resistance: 38oC/W junction to lead at 3/8  
Tungsten slugs  
inch (10 mm) lead length from body  
TERMINATIONS: Axial leads are copper with  
Tin/Lead (Sn/Pb) finish  
Thermal Impedance: 4.5oC/W @ 10 ms heating time  
MARKING: Body paint and part number, etc.  
POLARITY: Cathode band  
TAPE & REEL option: Standard per EIA-296  
WEIGHT: 340 mg  
Average Rectified Forward Current (IO): 1.0 Amps @  
TA = 55ºC and 0.750 Amps at TA = 100ºC  
Forward Surge Current: 15 Amps @ 8.3 ms half-sine  
Solder Temperatures: 260ºC for 10 s (maximum)  
See package dimensions on last page  
ELECTRICAL CHARACTERISTICS  
WORKING  
AVERAGE  
RECTIFIED  
CURRENT  
MAXIMUM  
FORWARD  
VOLTAGE  
MAXIMUM  
MINIMUM  
BREAKDOWN  
VOLTAGE  
MAXIMUM  
SURGE  
MAXIMUM  
REVERSE  
Maximum  
PEAK  
REVERSE  
CURRENT  
CAPACITANCE  
REVERSE  
VOLTAGE  
VRWM  
TYPE  
CURRENT RECOVERY  
(NOTE 1)  
IFSM  
AMPS  
(NOTE 2)  
trr  
ns  
C @ -12V  
pF  
BV @ 50µA  
IO  
VF @ 1 A  
VOLTS  
IR @ VRWM  
VOLTS  
VOLTS  
AMPS  
µA  
55oC  
100oC  
25oC  
150oC  
JAN1N4942  
JAN1N4944  
JAN1N4946  
JAN1N4947  
JAN1N4948  
200  
400  
220  
440  
660  
880  
1.00  
1.00  
1.00  
1.00  
1.00  
.750  
.750  
.750  
.750  
.750  
1.3  
1.3  
1.3  
1.3  
1.3  
1.0  
1.0  
1.0  
1.0  
200  
200  
200  
200  
45  
35  
25  
20  
15  
15  
15  
15  
15  
15  
150  
150  
250  
250  
500  
600  
800  
1000  
NOTE 1: TA = 100oC, 8.3 m1s1s00urges  
NOTE 2: IF = 0.5A, I 1.0= 1A,2I0R0(REC) = .250A  
RM  
Copyright 2004  
Microsemi  
Page 1  
12-08-2004 REV A  
Scottsdale Division  
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503  

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