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1N4936G-B PDF预览

1N4936G-B

更新时间: 2024-01-05 07:46:27
品牌 Logo 应用领域
安森美 - ONSEMI 快速恢复二极管
页数 文件大小 规格书
2页 86K
描述
1.0A FAST RECOVERY GLASS PASSIVATED RECTIFIER

1N4936G-B 技术参数

生命周期:Active零件包装代码:DO-41
包装说明:DO-41SP, 2 PIN针数:2
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.15
Is Samacsys:N外壳连接:ISOLATED
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODEJEDEC-95代码:DO-41
JESD-30 代码:O-PALF-W2JESD-609代码:e0
元件数量:1端子数量:2
最大输出电流:1 A封装主体材料:PLASTIC/EPOXY
封装形状:ROUND封装形式:LONG FORM
认证状态:Not Qualified最大重复峰值反向电压:400 V
最大反向恢复时间:0.2 µs表面贴装:NO
端子面层:TIN LEAD端子形式:WIRE
端子位置:AXIALBase Number Matches:1

1N4936G-B 数据手册

 浏览型号1N4936G-B的Datasheet PDF文件第2页 
GALAXY ELECTRICAL  
1N4933G---1N4937G  
BL  
VOLTAGE RANGE: 50 --- 600 V  
CURRENT: 1.0 A  
GLASS PASSIVATED JUNCTION  
FEATURES  
Low cost  
DO - 41  
Glass passivated junction  
Low leakage  
Low forward voltage drop  
High current capability  
Easilycleaned with Freon,Alcohil,Isopropanop  
and similar solvents  
The plastic material carries U/L recognition 94V-0  
MECHANICAL DATA  
Case:JEDEC DO-41,molded plastic  
Terminals: Axial lead ,solderable per  
MIL- STD-202,Method 208  
Polarity: Color band denotes cathode  
Weight: 0.34 grams  
Mounting position: Any  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS  
Ratings at 25 ambient temperature unless otherwise specified.  
Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by20%.  
1N  
4933G  
1N  
4934G  
1N  
4935G  
1N  
4936G  
1N  
4937G  
UNITS  
V
V
V
Maximum recurrent peak reverse voltage  
Maximum RMS voltage  
VRRM  
VRMS  
VDC  
50  
35  
50  
100  
70  
200  
140  
200  
400  
280  
400  
600  
420  
600  
Maximum DC blocking voltage  
100  
Maximum average forw ard rectified current  
A
IF(AV)  
1.0  
9.5mmlead length,  
@TA=75  
Peak forw ard surge current  
A
8.3ms single half-sine-w ave  
IFSM  
30.0  
1.3  
superimposed on rated load @TJ=125  
Maximum instantaneous forw ard voltage  
V
VF  
IR  
@1.0 A  
Maximum reverse current  
@TA=25  
5.0  
100.0  
A
at rated DC blocking voltage @TA=100  
Maximym reverse capacitance  
Typical junction capacitance  
Typical thermal resistance  
(Note1)  
(Note2)  
(Note3)  
trr  
CJ  
200  
ns  
pF  
12.0  
RθJA  
TJ  
22.0  
/W  
Operating junction temperature range  
- 55---- +175  
- 55---- + 175  
Storage temperature range  
NOTE: 1. Measured with IF=0.5A IR=1A Irr=0.25A.  
TSTG  
www.galaxycn.com  
2. Measured at 1.0MHz and applied rev erse voltage of 4.0V DC.  
3. Thermal resistance f rom junction to ambient.  
Document Number 0269004  
BLGALAXY ELECTRICAL  
1.  

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