Datasheet > 1N4935G

1N4935G

更新时间： 2024-03-03 10:08:16

品牌	Logo	应用领域
扬杰 - YANGJIE		/
页数	文件大小	规格书
4页	212K
描述
DO-41

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中文翻译

获取价格

数据手册

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1N4935G 数据手册

RoHS

1N4933G THRU 1N4937G

Fast Recovery Rectifier

COMPLIANT

Features

● High efficiency

● High current capability

● High reliability

● High surge current capability

● Low power loss

● Glass passivated chip junction

● Solder dip 275 °C max. 7 s, per JESD 22-B106

Mechanical Data

●

ackage: DO-204AL(DO-41)

Molding compound meets UL 94 V-0 flammability rating,

RoHS-compliant

● Terminals: Tin plated leads, solderable per J-STD-

002 and JESD22-B102

●

Color band denotes cathode end

Polarity:

(T =25℃Unless otherwise specified

■

Maximum Ratings

）

1N4933G

1N4934G

100

1N4935G

200

1N4936G

400

1N4937G

600

PARAMETER

SYMBOL UNIT

Device marking code

Maximum Repetitive Peak Reverse Voltage

Maximum RMS Voltage

RRM

RMS

140

280

420

100

200

400

600

Maximum DC blocking Voltage

Average Forward Current

@60Hz sine wave, Resistance load, Ta=75℃

I_F(AV)

1.0

Forward Surge Current (Non-repetitive)

@60Hz Half-sine wave,1 cycle, Tj=25℃

Forward Surge Current (Non-repetitive)

I_FSM

@1ms, square wave, 1 cycle, Tj=25℃

Current squared time

@1ms≤t8.3≤ms Tj=25℃，Rating of per diode

Typical junction capacitance

@Measured at 1MHz and Applied Reverse

Voltage of 4.0 V.D.C

A²s

I²t

3.735

-55 ~ +150

Storage Temperature

Junction Temperature

stg

℃

（T =25℃ Unless otherwise specified）

■Electrical Characteristics

1N4933G

1N4934G

1N4935G 1N4936G

1N4937G

PARAMETER

SYMBOL

UNIT

TEST CONDITIONS

Maximum instantaneous

forward voltage drop per diode

=1.0A

1.2

2.5

T =25℃

Maximum DC reverse current at

rated DC blocking voltage per

diode

μA

t_rr

100

150

T =125℃

I_F=0.5A,I_R=1.0A,

I_rr=0.25A

Maximum reverse recovery time

1 / 4

S-A023

Rev. 2.2, 30-Jan-21

Yangzhou Yangjie Electronic Technology Co., Ltd.

www.21yangjie.com

12 3 4

中文翻译

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与1N4935G相关器件

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1N4935GH02-2	RECTRON	获取价格	Rectifier Diode, 1 Element, 1A, 200V V(RRM), Silicon, DO-41,
1N4935GH03-3	RECTRON	获取价格	Rectifier Diode, 1 Element, 1A, 200V V(RRM), Silicon, DO-41,
1N4935GH04	RECTRON	获取价格	Rectifier Diode, 1 Element, 1A, 200V V(RRM), Silicon, DO-41,
1N4935GH05-1	RECTRON	获取价格	Rectifier Diode, 1 Element, 1A, 200V V(RRM), Silicon, DO-41,
1N4935GH06	RECTRON	获取价格	Rectifier Diode, 1 Element, 1A, 200V V(RRM), Silicon, DO-41,
1N4935GH07	RECTRON	获取价格	Rectifier Diode, 1 Element, 1A, 200V V(RRM), Silicon, DO-41,