5秒后页面跳转
1N4935G PDF预览

1N4935G

更新时间: 2024-02-15 22:48:28
品牌 Logo 应用领域
MIC 二极管快速恢复二极管
页数 文件大小 规格书
2页 53K
描述
FAST RECOVERY GLASS PASSIVATED RECTIFIER

1N4935G 技术参数

生命周期:Active零件包装代码:DO-41
包装说明:DO-41SP, 2 PIN针数:2
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.13
外壳连接:ISOLATED配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
JEDEC-95代码:DO-41JESD-30 代码:O-PALF-W2
JESD-609代码:e0元件数量:1
端子数量:2最大输出电流:1 A
封装主体材料:PLASTIC/EPOXY封装形状:ROUND
封装形式:LONG FORM认证状态:Not Qualified
最大重复峰值反向电压:200 V最大反向恢复时间:0.2 µs
表面贴装:NO端子面层:TIN LEAD
端子形式:WIRE端子位置:AXIAL
Base Number Matches:1

1N4935G 数据手册

 浏览型号1N4935G的Datasheet PDF文件第2页 
FAST RECOVERY GLASS PASSIVATED RECTIFIER  
VOLTAGE RANGE  
50 to 600 Volts  
1.0 Ampere  
1N4933G THRU 1N4937G  
CURRENT  
FEATURES  
DO-41  
·
·
·
·
·
Fast switching for high efficiency  
Glass passivated chip junction  
High current surge capability  
Low leakage  
High temperature soldering guaranteed  
260/10 seconds,0.375(9.5mm)lead length at 5 lbs (2.3kg) tension  
MECHANICAL DATA  
·
·
·
·
·
·
Case: Transfer molded plastic  
Epoxy: UL94V-0 rate flame retardant  
Polarity: Color band denotes cathode end  
Lead: Plated axial lead, solderable per MIL-STD-202E method 208C  
Mounting position: Any  
Weight: 0.012ounce, 0.33 gram  
Dimensions in inches and (millimeters)  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS  
·
·
·
Ratings at 25ambient temperature unless otherwise specified  
Single Phase, half wave, 60Hz, resistive or inductive load  
For capacitive load derate current by 20%  
SYMBOLS 1N4933G 1N4934G 1N4935G 1N4936G 1N4937G UNIT  
Maximum Repetitive Peak Reverse Voltage  
Maximum RMS Voltage  
VRRM  
VRMS  
VDC  
50  
35  
50  
700  
70  
200  
140  
200  
400  
280  
400  
600  
420  
600  
Volts  
Volts  
Volts  
Maximum DC Blocking Voltage  
100  
Maximum Average Forward Rectified Current  
0.375(9.5mm) lead length at TA =55℃  
I(AV)  
1.0  
Amp  
Peak Forward Surge Current  
8.3ms single half sine-wave superimposed on  
rated load (JEDEC method)  
IFSM  
VF  
IR  
30  
Amps  
Volts  
µA  
Maximum Instantaneous Forward Voltage at 1.0A  
1.3  
TA = 25℃  
5.0  
Maximum DC Reverse Current at rated  
DC Blocking Voltage  
TA = 125℃  
100  
200  
Maximum Reverse Recovery Time(NOTE 3)  
Typical Junction Capacitance (NOTE 1)  
Typical Thermal Resistance (NOTE 2)  
Operating Temperature Range  
Storage Temperature Range  
trr  
CJ  
RθJA  
TJ  
nS  
pF  
/W  
15  
50  
(-55 to +150)  
(-55 to +150)  
TSTG  
Notes:  
1. Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts.  
2. Thermal Resistance from Junction to Ambient at.375(9.5mm) lead length, P.C board mounted.  
3. Test conditions: IF=1.0A, VR=30V, di/dt=50A/μs, and IRR=10% IRM for measurement of trr.  
E-mail: sales@cnmic.com  
Web Site: www.cnmic.com  

与1N4935G相关器件

型号 品牌 获取价格 描述 数据表
1N4935G(LS) DIODES

获取价格

1.0A FAST RECOVERY GLASS PASSIVATED RECTIFIER
1N4935G-A ONSEMI

获取价格

1.0A FAST RECOVERY GLASS PASSIVATED RECTIFIER
1N4935G-B ONSEMI

获取价格

1.0A FAST RECOVERY GLASS PASSIVATED RECTIFIER
1N4935GH02-1 RECTRON

获取价格

Rectifier Diode, 1 Element, 1A, 200V V(RRM), Silicon, DO-41,
1N4935GH02-2 RECTRON

获取价格

Rectifier Diode, 1 Element, 1A, 200V V(RRM), Silicon, DO-41,
1N4935GH03-3 RECTRON

获取价格

Rectifier Diode, 1 Element, 1A, 200V V(RRM), Silicon, DO-41,
1N4935GH04 RECTRON

获取价格

Rectifier Diode, 1 Element, 1A, 200V V(RRM), Silicon, DO-41,
1N4935GH05-1 RECTRON

获取价格

Rectifier Diode, 1 Element, 1A, 200V V(RRM), Silicon, DO-41,
1N4935GH06 RECTRON

获取价格

Rectifier Diode, 1 Element, 1A, 200V V(RRM), Silicon, DO-41,
1N4935GH07 RECTRON

获取价格

Rectifier Diode, 1 Element, 1A, 200V V(RRM), Silicon, DO-41,