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1N4763A PDF预览

1N4763A

更新时间: 2024-11-29 22:37:59
品牌 Logo 应用领域
TRSYS 稳压二极管测试
页数 文件大小 规格书
5页 351K
描述
GLASS PASSIVATED JUNCTION SILICON ZENER DIODE

1N4763A 数据手册

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1N4741A THRU 1M200Z  
GLASS PASSIVATED JUNCTION SILICON ZENER DIODE  
VOLTAGE - 11 TO 200 Volts Power - 1.0 Watt  
DO-41  
FEATURES  
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Low profile package  
Built-in strain relief  
Glass passivated junction  
Low inductance  
Typical IR less than 5.0 A above 11V  
High temperature soldering :  
260 /10 seconds at terminals  
Plastic package has Underwriters Laboratory  
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Flammability Classification 94V-O  
MECHANICAL DATA  
Case: Molded plastic, DO-41  
Epoxy: UL 94V-O rate flame retardant  
Lead: Axial leads, solderable per MIL-STD-202,  
method 208 guaranteed  
Polarity: Color band denotes cathode end  
Mounting position: Any  
Weight: 0.012 ounce, 0.3 gram  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS  
Ratings at 25 ambient temperature unless otherwise specified.  
SYMBOL  
PD  
VALUE  
1.0  
6.67  
UNITS  
Watts  
mW/  
Peak Pulse Power Dissipation on TA=50 (Note A)  
Derate above 50  
Peak forward Surge Current 8.3ms single half sine-wave  
superimposed on rated load(JEDEC Method) (Note B)  
Operating Junction and Storage Temperature Range  
IFSM  
10  
Amps  
TJ,TSTG  
-55 to +150  
NOTES:  
A. Mounted on 5.0mm2(.013mm thick) land areas.  
B. Measured on 8.3ms, single half sine-wave or equivalent square wave, duty cycle = 4 pulses per minute maximum.  

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