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1N4760AP-TP PDF预览

1N4760AP-TP

更新时间: 2024-11-18 13:03:31
品牌 Logo 应用领域
美微科 - MCC 二极管齐纳二极管测试
页数 文件大小 规格书
4页 209K
描述
Zener Diode,

1N4760AP-TP 技术参数

是否Rohs认证: 符合生命周期:Active
Reach Compliance Code:not_compliantECCN代码:EAR99
HTS代码:8541.10.00.50风险等级:5.58
二极管类型:ZENER DIODEJESD-609代码:e3
湿度敏感等级:1峰值回流温度(摄氏度):NOT SPECIFIED
端子面层:Matte Tin (Sn)处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

1N4760AP-TP 数据手册

 浏览型号1N4760AP-TP的Datasheet PDF文件第2页浏览型号1N4760AP-TP的Datasheet PDF文件第3页浏览型号1N4760AP-TP的Datasheet PDF文件第4页 
M C C  
Micro Commercial Components  
1N4728  
1N4728  
THRU  
THRU  
1N4761  
1N476  
TM  
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20736 Marilla Street Chatsworth  
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ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ  
$ꢉ%ꢒꢅ   ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ  
Features  
Hermetic Glass Package  
1.0 Watt  
Silicon Planar Zener Diodes  
Zener Diode  
3.3 to 75 Volts  
Lead Free Finish/Rohs Compliant (Note2) ("P"Suffix designates  
Compliant. See ordering information)  
Moisture Sensitivity: Level 1  
Mechanical Data  
Case: DO-41 Glass Package  
DO-41G  
Marking : Cathode band and type number  
Weight: 0.309 grams (Approx.)  
D
Maximum Ratings  
Operating Temperature: -65oC to +200oC  
Storage Temperature: -65oC to +200oC  
For capacitive load, derate current by 20%  
A
Cathode  
Mark  
B
Electrical Characteristics @ 25oC Unless Otherwise Specified  
D
DC Power  
Dissipation  
O
TA 50 C  
Pd  
1.0W  
C
Forward  
Voltage  
VF  
1.2V  
Drop  
Thermal  
Resistance  
RthJA  
Ptot  
100K/W  
Note 1  
DIMENSIONS  
Power Derating  
10mW/oC  
INCHES  
M M  
from 100oC  
DIM  
A
NOTE  
MIN  
MAX  
0.177  
0.110  
MIN  
-----  
-----  
MAX  
-----  
-----  
4.50  
2.80  
Diameter  
Diameter  
B
C
D
Note: (1) Valid provided that electrodes at a distance  
0.026  
1.000  
0.034  
-----  
0.70  
0.90  
-----  
of 10mm from case are kept at ambient  
25.40  
temperature.  
(2). Lead in Glass Exemption Applied, see EU Directive Annex 5.  
www.mccsemi.com  
1 of 4  
Revision: A  
2011/01/01  

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