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1N4756A PDF预览

1N4756A

更新时间: 2024-01-18 10:32:34
品牌 Logo 应用领域
TSC 稳压二极管测试
页数 文件大小 规格书
5页 82K
描述
Glass Passivated Junction Silicon Zener Diode

1N4756A 数据手册

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1N4741A THRU 1M200Z  
Glass Passivated Junction Silicon Zener Diode  
Voltage Range  
11 to 200 Volts  
1.0 Watts Peak Power  
DO-41  
Features  
Low profile package  
Built-in strain relief  
Glass passivated junction  
Low inductance  
Typical IR less than 5.0μA above 11V  
High temperature soldering guaranteed:  
260OC / 10 seconds at terminals  
Plastic package has Underwriters Laboratory  
Flammability Classification 94V-0  
Mechanical Data  
Case: Molded plastic DO-41  
Epoxy: UL 94V-O rate flame retardant  
Lead: Axial leads, solderable per MIL-STD-202,  
Method 2025  
Polarity: Color Band denotes cathode end  
Mounting position : Any  
Weight: 0.012 ounces, 0.3 gram  
Dimensions in inches and (millimeters)  
Maximum Ratings and Electrical Characteristics  
Rating at 25ambient temperature unless otherwise specified.  
Type Number  
Symbol  
Value  
1.0  
6.67  
Units  
Watts  
Peak Power Dissipation at TA=50OC,  
Derate above 50 OC (Note 1)  
PD  
mW/ OC  
Peak Forward Surge Current, 8.3 ms Single Half  
Sine-wave Superimposed on Rated Load  
(JEDEC method) (Note 2)  
IFSM  
10.0  
Amps  
OC  
TJ, TSTG  
-55 to + 150  
Operating and Storage Temperature Range  
Notes: 1. Mounted on 5.0mm2 (0.013mm thick) land areas.  
2. Measured on 8.3ms Single Half Sine-wave or Equivalent Square Wave,  
Duty Cycle=4 Pulses Per Minute Maximum.  
- 818 -  

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