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1N4747 PDF预览

1N4747

更新时间: 2024-11-13 06:18:43
品牌 Logo 应用领域
JINANJINGHENG 二极管齐纳二极管测试局域网
页数 文件大小 规格书
3页 127K
描述
1W SILICON PLANAR ZENER DIODES

1N4747 数据手册

 浏览型号1N4747的Datasheet PDF文件第2页浏览型号1N4747的Datasheet PDF文件第3页 
R
1W SILICON PLANAR ZENER DIODES  
S
E M I C O N D U C T O R  
DO-41(GLASS)  
FEATURES  
Silic on p la na r p owe r ze ne r d iod e s  
1.102(28)  
MIN  
For use in sta b ilizing a nd c lipp ing c irc uits with hig h powe r ra ting.  
Sta nd a rd s Ze ne r volta g e tole ra nc e is 10%.  
Add suffix "A" for 5% tole ra nc e Othe r tole ra nc e a va ila b le up on  
re q ue st  
0.102(2.6)  
MAX  
DIA  
0.161(4.1)  
MAX  
MECHANICAL DATA  
Case  
:
DO-41 g la ss c a se  
App rox. 0.35 g ra m  
1.102(28)  
MIN  
Weight  
:
0.034(0.86)  
MAX  
DIA  
Dime nsions in inc hes a nd (millime te rs)  
ABSOLUTE MAXIMUM RATINGS(LIMITING VALUES) (T  
A
= 25 C)  
Ze ne r c urre nt se e ta b le "Cha ra c te ristic s"  
Powe r d issip a tion a t T = 25 C  
Junc tion te mp e ra ture  
Stora g e te mp e ra ture ra ng e  
1) Va lid p ro vid e d tha t a d ista nc e of 8mm from c a se a re ke p t a t a mb ie nt te mp e ra ture  
1)  
A
P
tot  
1
mW  
175  
C
C
T
J
-65 to+ 175  
T
STG  
ELECTRICAL CHARACTERISTICS (T  
A
= 25 C)  
1701)  
1.2  
R
thA  
The rma l re sista nc e junc tion to a mb ie nt a ir  
Forwa rd volta g e a t I = 200mA  
1) Va lid p ro vid e d tha t a d ista nc e of 8mm fro m c a se a re ke p t a t a mb ie nt te mp e ra ture  
/W  
V
C
F
V
F

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