Datasheet > 1N4728_07

1N4728_07

更新时间： 2024-09-19 07:21:31

品牌	Logo	应用领域
EIC		稳压二极管
页数	文件大小	规格书
2页	91K
描述
SILICON ZENER DIODES

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中文翻译

获取价格

数据手册

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1N4728_07 数据手册

Certificate TH97/10561QM

Certificate TW00/17276EM

SILICON ZENER DIODES

1N4728 - 1N4764

Z1110 - Z1200

DO - 41

: 3.3 - 200 Volts

: 1 Watt

1.00 (25.4)

0.108 (2.74)

MIN.

FEATURES :

0.078 (1.99)

* Complete voltage range 3.3 to 200 Volts

* High peak reverse power dissipation

* High reliability

0.205 (5.20)

0.161 (4.10)

* Low leakage current

* Pb / RoHS Free

MECHANICAL DATA

1.00 (25.4)

0.034 (0.86)

MIN.

* Case : DO-41 Molded plastic

* Epoxy : UL94V-O rate flame retardant

* Lead : Axial lead solderable per MIL-STD-202,

method 208 guaranteed

0.028 (0.71)

Dimensions in inches and ( millimeters )

* Polarity : Color band denotes cathode end

* Mounting position : Any

* Weight : 0.335 gram

MAXIMUM RATINGS

Rating at 25 °C ambient temperature unless otherwise specified

Rating

DC Power Dissipation at T_L= 50 °C (Note1)

Maximum Forward Voltage at I_F= 200 mA

Maximum Thermal Resistance Junction to Ambient Air (Note2)

Junction Temperature Range

Symbol

P_D

Value

1.0

Unit

Watt

Volts

K / W

°C

V_F

1.2

R_ӨJA

T_J

170

- 55 to + 175

T_STG

Storage Temperature Range

°C

Notes :

(1) TL = Lead temperature at 3/8 " (9.5mm) from body

(2) Valid provided that leads are kept at ambient temperature at a distance of 10 mm from case.

Fig. 1 POWER TEMPERATURE DERATING CURVE

1.25

1.00

0.75

0.50

L = 3/8" (9.5mm)

0.25

100

125

150

175

T^L,LEAD TEMPERATURE (°C)

Page 1 of 2

Rev. 07 : November 5, 2007

中文翻译

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