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1N4448WS PDF预览

1N4448WS

更新时间: 2024-11-02 17:00:59
品牌 Logo 应用领域
扬杰 - YANGJIE /
页数 文件大小 规格书
4页 320K
描述
SOD-323

1N4448WS 数据手册

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RoHS  
COMPLIANT  
1N4448WS  
High Speed Switching Diode  
Features  
● VR 75V  
IFAV 250mA  
Typical Applications  
● Extreme fast switches  
Mechanical Data  
ackage SOD323  
P :  
Terminals Tin plated leads, solderable per  
:
J-STD-002 and JESD22-B102  
Cathode line denotes the cathode end  
T5  
Polarity:  
Marking:  
(T =25Unless otherwise specified)  
Maximum Ratings  
a
Conditions  
VALUE  
PARAMETER  
SYMBOL  
UNIT  
μA  
DC Blocking Voltage  
VR  
V
75  
2
IR=100  
Peak forward surge current  
Average forward current  
Power dissipation  
IFSM  
IFAV  
A
tp=1μs  
mA  
mW  
/W  
250  
Ptot  
200  
Thermal Resistance  
RthJA  
Tj  
625  
Maximum junction temperature  
Storage temperature range  
-55 to +150  
-55 to +150  
Tstg  
Electrical Characteristics (T =25Unless otherwise specified)  
a
Conditions  
VALUE  
PARAMETER  
SYMBOL  
UNIT  
IF=5.0mA  
IF=10mA  
IF=100mA  
IF=150mA  
VR=20V  
0.720  
0.855  
1
Maximum  
V
F
V
Forward voltage  
1.25  
25  
nA  
μA  
nA  
μA  
30  
VR=25V, TJ=150  
VR=75V  
Maximum  
I
R
Reverse current  
200  
50  
VR=75V, TJ=150  
μA  
Minimum Breakdown voltage  
VR  
CD  
trr  
V
75  
4
IR=1  
Maximum  
pF  
ns  
VR=VF=0V, f =1MHZ  
Diode capacitance  
Maximum  
IF=10mA,Irr=0.1IR,RL=100Ω  
4
Reverse recovery time  
1 / 4  
Yangzhou Yangjie Electronic Technology Co., Ltd.  
S-S1342  
Rev. 1.4, 10-Jan-23  
www.21yangjie.com  

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