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1N4448WS PDF预览

1N4448WS

更新时间: 2024-11-02 14:53:03
品牌 Logo 应用领域
鲁光 - LGE 开关小信号开关二极管
页数 文件大小 规格书
2页 1261K
描述
小信号开关二极管

1N4448WS 数据手册

 浏览型号1N4448WS的Datasheet PDF文件第2页 
1N4448WS  
0.2W Fast Switching Diodes  
SOD-323  
±0.10  
±0.05  
±0.10  
Features  
Fast Switching Speed  
±0.10  
Surface Mount Package Ideally Suited for Automatic Insertion  
For General Purpose Switching Applications  
High Conductance  
±0.05  
Maximum Ratings and Electrical Characteristics  
Rating at 25oC ambient temperature unless otherwise specified.  
Dimensions in inches and (millimeters)  
Maximum Ratings  
Parameter  
Symbol  
Limits  
Unit  
Non-Repetitive Peak reverse voltage  
VRM  
100  
V
Peak Repetitive Peak reverse voltage  
Working Peak  
VRRM  
VRWM  
VR  
75  
V
DC Blocking  
Voltage  
RMS Reverse Voltage  
VR(RMS)  
IFM  
53  
V
Forward Continuous Current  
Average Rectified Output Current  
500  
250  
mA  
mA  
IO  
Peak forward surge current @=1.0μs  
4.0  
2.0  
IFSM  
Pd  
A
@=1.0s  
Power Dissipation  
200  
mW  
/W  
Thermal Resistance Junction to  
Ambient  
RθJA  
TSTG  
625  
Storage temperature  
-65~+150  
Electrical Ratings  
Parameter  
Symbol  
V (BR)R  
VF1  
Min.  
75  
Typ.  
Max. Unit  
Conditions  
IR=10μA  
IF=5mA  
Reverse Breakdown Voltage  
V
0.62  
0.72  
0.855  
1.0  
V
V
VF2  
IF=10mA  
IF=100mA  
IF=150mA  
VR=75V  
Forward voltage  
VF3  
V
VF4  
1.25  
2.5  
V
IR1  
μA  
nA  
pF  
Reverse current  
IR2  
25  
VR=20V  
Capacitance between terminals  
Reverse Recovery Time  
CT  
4
VR=0V,f=1MHz  
IF=IR=10mA  
trr  
4
ns  
Irr=0.1XIR,RL=100Ω  
http://www.lgesemi.com  
mail:lge@lgesemi.com  
Revision:20170701-P1  

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