RoHS
COMPLIANT
1N4448W
Small-Signal Fast Switching Diodes
Features
● VR 100V
●
IFAV 250mA
Typical Applications
● Extreme fast switches
Mechanical Data
●
ackage: SOD123
P
● Terminals: Tin plated leads, solderable per
J-STD-002 and JESD22-B102
●
●
Cathode line denotes the cathode end ꢀ
T5
Polarity:
Marking:
(T =25℃Unless otherwise specified
■
Maximum Ratings
)
a
Conditions
VALUE
100
PARAMETER
SYMBOL
VRRM
VR
UNIT
Repetitive peak reverse voltage
Reverse voltage
V
V
IR=100uA
100
Pulse width=1 us
Pulse width=1 s
2
0.5
Peak forward surge current
Average forward current
Power dissipation
IFSM
A
IFAV
mA
mW
250
500
Ptot
Tj
Maximum junction temperature
Storage temperature range
-55 to +150
-55to +150
315
℃
℃
Tstg
Thermal Resistance Junction to Ambient
Air
RθJA
℃/W
Electrical Characteristics(T =25℃ Unless otherwise specified)
■
a
PARAMETER
Symbol
UNIT
Conditions
Min
Max
Breakdown Voltage
Forward Voltage
VR
V
IR=100uA
IF=100mA
VR=20V
100
VF
V
1.00
25
200
4
IR1
nA
nA
pF
ns
Reverse Leakage Current
IR2
VR=75V
Capacitance
C
VR=0V,f=1MHz
IF=IR=10mA,Irr=0.1*IR,
RL=100Ω
Reverse Recovery Time
Trr
4
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Yangzhou Yangjie Electronic Technology Co., Ltd.
S-S1483
Rev.1.5, 16-Dec-22
www.21yangjie.com