Datasheet > 1N4448W

1N4448W

更新时间： 2024-10-31 02:54:23

品牌	Logo	应用领域
辰达行 - MDD		开关
页数	文件大小	规格书
3页	726K
描述
SURFACE MOUNT FAST SWITCHING DIODE

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中文翻译

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数据手册

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1N4448W 数据手册

1N4448W

SURFACE MOUNT FAST SWITCHING DIODE

SOD-123

1N4448W SWITCHING DIODE

Cathode bar

FEATURES

 Fast Switching Speed

 Low Reverse Current

0.071(1.80)

0.059(1.50)

0.028(0.70)

0.020(0.50)

0.110(2.80)

0.098(2.50)



Surface Mount Package

0.154 (3.90)

0.142 (3.60)



For General Purpose Switching Applications

Marking

0.018 (0.45)

0.010 (0.25)

Mechanical Data

Case : SOD-123

0.019 (0.475) ref.

Terminals : Solderable per MIL-STD-750,Method 2026

Polarity : Polarity symbol marking on body

Mounting Position: Any

Dimensions in inches and (millimeters)

Weight

: 0.00056 ounce, 0.016 grams

Maximum Ratings and Electrical Characteristics, Single Diode @Ta=25℃

Symbo

Parameter

Limit

Unit

Non-Repetitive Peak Reverse Voltage

V_RM

100

Peak Repetitive Peak Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

V_RRM

V_RWM

V_R

100

Maximum RMS Voltage

V_RMS

I_FM

Forward Continuous Current

Average Rectified Output Current

300

150

I_O

t=1S

t=1mS

t=1uS

0.5

1.0

4.0

Current @

Non-Repetitive Peak Forward Surge

I_FSM

Power Dissipation

R_θJA

T_j

400

250

℃/W

℃

Thermal Resistance Junction to Ambient

Junction Temperature

150

T_STG

-55~+150

Storage Temperature

℃

ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)

Parameter

Symbol

Test conditions

Min

Max

Unit

Reverse breakdown voltage

V_(BR)

I_R

I_R= 100µA

V_R=75V

V_R=20V

Reverse voltage leakage current

µA

0.025

0.62

I_F=5mA

0.72

0.855

I_F=10mA

I_F=100mA

I_F=150mA

Forward voltage

V_F

1.25

Capacitance between terminals

C_T

t_rr

V_R=0, f=1MHz

I_F=I_R=10mA,I_rr=0.1×I_R,

Reveres recovery time

R_L=100Ω

DN:T19B04A0

The above data are for reference only.

http://www.microdiode.com

Rev:2019A0

Page :1

12 3

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