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1N4448W PDF预览

1N4448W

更新时间: 2024-11-24 06:25:07
品牌 Logo 应用领域
TAK_CHEONG 整流二极管开关
页数 文件大小 规格书
4页 692K
描述
400mW SOD-123 SURFACE MOUNT Small Outline Flat Lead Plastic Package General Purpose Application Fast Switching Diode

1N4448W 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:ROHS COMPLIANT, PLASTIC PACKAGE-2针数:2
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.10.00.70风险等级:5.58
Is Samacsys:N配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
JESD-30 代码:R-PDSO-F2JESD-609代码:e3
元件数量:1端子数量:2
最高工作温度:150 °C最大输出电流:0.15 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
最大功率耗散:0.4 W认证状态:Not Qualified
最大重复峰值反向电压:75 V最大反向恢复时间:0.004 µs
表面贴装:YES端子面层:Matte Tin (Sn)
端子形式:FLAT端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

1N4448W 数据手册

 浏览型号1N4448W的Datasheet PDF文件第2页浏览型号1N4448W的Datasheet PDF文件第3页浏览型号1N4448W的Datasheet PDF文件第4页 
TAK CHEON
G
®  
SEMICONDUCTOR  
400mW SOD-123 SURFACE MOUNT  
Small Outline Flat Lead Plastic Package  
General Purpose Application  
Green Product  
Fast Switching Diode  
Absolute Maximum Ratings TA = 25°C unless otherwise noted  
Symbol  
Parameter  
Value  
Units  
PD  
Power Dissipation  
400  
mW  
TSTG  
TJ  
Storage Temperature Range  
-65 to +150  
+150  
100  
°C  
°C  
V
SOD-123 Flat Lead  
Operating Junction Temperature  
Non-Repetitive Peak Reverse Voltage  
Repetitive Peak Reverse Voltage  
Repetitive Peak Forward Current  
Continuous Forward Current  
VRSM  
VRRM  
IFRM  
IO  
75  
V
300  
mA  
mA  
150  
These ratings are limiting values above which the serviceability of the diode may be impaired.  
Specification Features:  
.
.
.
.
.
.
.
.
Fast Switching Device (TRR <4.0 nS)  
General Purpose Diodes  
DEVICE MARKING CODE:  
Device Type  
Device Marking  
Flat Lead SOD-123 Small Outline Plastic Package  
Surface Device Type Mounting  
RoHS Compliant  
1N4148W  
1N4448W  
1N914BW  
D1  
D2  
D3  
Green EMC  
Matte Tin(Sn) Lead Finish  
Band Indicates Cathode  
Electrical Characteristics  
TA = 25°C unless otherwise noted  
Limits  
Max  
Parameter  
Test Condition  
IR=100µA  
Symbol  
Unit  
Min  
100  
75  
BV  
Breakdown Voltage  
Reverse Leakage Current  
Forward Voltage  
Volts  
IR=5µA  
IR  
VR=20V  
VR=75V  
IF=5mA  
IF=10mA  
25  
5
nA  
µA  
VF  
1N4448W, 1N914BW  
0.62  
0.72  
1.0  
1.0  
TC1N444  
8W, 1N4148W  
Volts  
1N4448W, 1N914BW IF=100mA  
TRR  
Reverse Recovery Time  
IF=10mA  
IR=60mA  
RL=100  
IRR=1mA  
4
4
nS  
pF  
C
Capacitance  
VR=0V, f=1MHZ  
Oct 2008 Release, Revision E  
Page 1  

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