Datasheet > 1N4448

1N4448

更新时间： 2024-10-15 14:55:51

品牌	Logo	应用领域
先科 - SWST		开关小信号开关二极管
页数	文件大小	规格书
3页	74K
描述
小信号开关二极管

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1N4448 数据手册

1N4448

Silicon Epitaxial Planar Switching Diode

Applications

Max. 0.5

• High-speed switching

Min. 27.5

Max. 3.9

Min. 27.5

Max. 1.9

Black

Cathode Band

Black

Part No.

Black

"ST" Brand

XXX

This diode is also available in MiniMELF case with

the type designation LL4448.

Glass Case DO-35

Dimensions in mm

Absolute Maximum Ratings (T_a= 25 C)

Parameter

Symbol

V_RM

V_R

Value

100

Unit

Peak Reverse Voltage

Reverse Voltage

Average Rectified Forward Current

Surge Forward Current at t < 1 s

Power Dissipation

I_F(AV)

I_FSM

P_tot

150

500

500 ¹⁾

Junction Temperature

T_j

200

Storage Temperature Range

T_stg

- 65 to + 200

¹⁾Valid provided that leads at a distance of 8 mm from case are kept at ambient temperature.

Characteristics at T_a= 25 C

Parameter

Symbol

V_F

Min.

Max.

Unit

Forward Voltage

at I_F= 5 mA

at I_F= 100 mA

0.62

0.72

Reverse Leakage Current

at V_R= 20 V

I_R

µA

at V_R= 75 V

at V_R= 20 V, T_j= 150 C

Reverse Breakdown Voltage

at I_R= 100 µA

V_(BR)R

C_tot

t_rr

100

Capacitance

at V_R= 0, f = 1 MHz

Reverse Recovery Time

at I_F= 10 mA to I_R= 1 mA, V_R= 6 V, R_L= 100 Ω

Dated : 15/06/2009

12 3

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