Datasheet > 1N4448

1N4448

更新时间： 2024-10-15 14:52:03

品牌	Logo	应用领域
鲁光 - LGE		开关小信号开关二极管
页数	文件大小	规格书
2页	956K
描述
小信号开关二极管

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数据手册

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1N4448 数据手册

1N4448/1N4148/1N914B

500 mW Hermetically Sealed Glas Fast Switching Diodes

DO-35

Features

Fast switching device (T_RR<4.0nS)

DO-35 package (JEDEC)

Through-hole device type mounting

Hermetically sealed glass

Compression bonded construction

All external surface are corrosion

resistant and leads are readily solderable

RoHS compliant

Solder hot dip Tin(Sn) lead finish

Cathode indicated by polarity band

Dimensions in inches and(millimeters)

Maximum Ratings and Electrical Characteristics

Rating at 25^oC ambient temperature unless otherwise specified.

Maximum Ratings

Type Number

Power Dissipation

Symbol

WIV

IFM

I_FSURGE

Value

500

450

150

175

Units

Working Inverse Voltage

Non-repetitive Peak Forward Current

Average Rectified Current

Peak Forward Surge Current

Operating Junction Temperature

Storage Temperature Range

T_J

T_STG

^OC

-65 to + 200

^OC

Electrical Characteristics

Type Number

Breakdown Voltage

Symbol

Min

100

Max

Units

IR=100uA

B_V

IR=5uA

Forward Voltage

1N4448, 1N914B

1N4148

1N4448, 1N914B

IF=5.0mA

IF= 10mA

IF =100mA

VR=20V

0.62

0.72

1.0

Reverse Leakage Current

VR=75V

－

Junction Capacitance

VR=0, f=1.0MHz

4.0

trr

Reverse Recovery Time (Note 1)

Notes: 1. Reverse Recovery Test Conditions: I_F=10mA, VR=6V, R_L=100Ω, I_RR=1mA

http://www.lgesemi.com

mail:lge@lgesemi.com

Revision:20170701-P1

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