Datasheet > 1N4448

1N4448

更新时间： 2024-10-15 14:49:55

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描述
Switching Diodes

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技术参数
数据手册

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1N4448 技术参数

是否无铅：	不含铅	生命周期：	Active
Reach Compliance Code：	compliant	风险等级：	5.58
Is Samacsys：	N	二极管类型：	RECTIFIER DIODE
Base Number Matches：	1

1N4448 数据手册

www.eicsemi.com

HIGH SPEED SWITCHING DIODE

1N4448

DO - 35 Glass

(DO-204AH)

FEATURES :

• High switching speed: max. 4 ns

• Reverse voltage:max. 75V

• Peak reverse voltage:max. 100 V

• Pb / RoHS Free

1.00 (25.4)

0.079(2.0 )max.

min.

0.150 (3.8)

Cathode

max.

Mark

1.00 (25.4)

0.020 (0.52)max.

min.

MECHANICAL DATA :

Case: DO-35 Glass Case

Weight: approx. 0.13g

Dimensions in inches and ( millimeters )

Maximum Ratings and Thermal Characteristics (Rating at 25 °C ambient temperature unless otherwise specified.)

Parameter

Symbol

Value

100

Unit

Maximum Peak Reverse Voltage

Maximum Reverse Voltage

V_RM

V_R

I_F

Maximum Continuous Forward Current

Maximum Average Forward Current ⁽¹⁾

Half Wave Rectification with Resistive Load , f ³ 50 Hz

Maximum Surge Forward Current at t < 1s , Tj = 25°C

Maximum Power Dissipation

200

I_F(AV)

150

I_FSM

P_D

T_J

0.5

500

°C

Maximum Junction Temperature

Storage Temperature Range

175

T_S

-65 to + 175

°C

Note : (1) Valid provided that leads at a distance of 8mm from case are kept at ambient temperature

Electrical Characteristics (T_J= 25°C unless otherwise noted)

Test Condition

Min.

Typ.

Max.

Unit

Parameter

Symbol

V_R= 20 V

I_R

Reverse Current

V_R= 20 V , Tj = 150 °C

I_F= 10 mA

V_F

V_(BR)R

Forward Voltage

100

1.0

I_R= 100 mA (pulsed)

f = 1MHz ; V_R= 0

Reverse Breakdown Voltage

Diode Capacitance

4.0

I_F= 10 mA to I_R= 1mA

V_R= 6V , R_L= 100 W

Reverse Recovery Time

Trr

4.0

Page 1 of 2

Rev. 02 : March 25, 2005

中文翻译

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与1N4448相关器件

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1N4448.T26R	FAIRCHILD	获取价格	Rectifier Diode, 1 Element, 0.2A, 100V V(RRM), Silicon, DO-35
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1N4448.TR	FAIRCHILD	获取价格	DIODE 0.2 A, 100 V, SILICON, SIGNAL DIODE, DO-35, Signal Diode
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