August 2011
1N4447
Small Signal Diode
DO-35
Color Band Denotes Cathode
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
Symbol
VRRM
IF(AV)
Parameter
Value
100
Units
V
Maximum Repetitive Reverse Voltage
Average Rectified Forward Current
200
mA
IFSM
Non-repetitive Peak Forward Surge Current
Pulse Width = 1.0 second
1.0
4.0
A
A
Pulse Width = 1.0 microsecond
TSTG
TJ
Storage Temperature Range
-65 to +200
175
°C
°C
Operating Junction Temperature
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 200 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle
operations.
Thermal Characteristics
Symbol
PD
Parameter
Power Dissipation
Thermal Resistance, Junction to Ambient
Value
500
Units
mW
RθJA
300
°C/W
Electrical Characteristics TA = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min.
Max.
Units
VR
Breakdown Voltage
IR = 100μA
IR = 5.0μA
100
75
V
V
VF
IR
Forward Voltage
Reverse Leakage
IF = 20mA
1.0
V
VR = 20V
VR = 20V, TA = 150°C
25
50
nA
μA
CT
trr
Total Capacitance
VR = 0, f = 1.0MHz
2.0
4.0
pF
ns
Reverse Recovery Time IF = 10mA, VR = 6.0V
Irr = 1.0mA, RL = 100Ω
© 2011 Fairchild Semiconductor Corporation
1N4447 Rev. A0
www.fairchildsemi.com
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