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1N4447_11 PDF预览

1N4447_11

更新时间: 2022-04-07 12:25:09
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飞兆/仙童 - FAIRCHILD 信号二极管
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2页 96K
描述
Small Signal Diode

1N4447_11 数据手册

 浏览型号1N4447_11的Datasheet PDF文件第2页 
August 2011  
1N4447  
Small Signal Diode  
DO-35  
Color Band Denotes Cathode  
Absolute Maximum Ratings* TA = 25°C unless otherwise noted  
Symbol  
VRRM  
IF(AV)  
Parameter  
Value  
100  
Units  
V
Maximum Repetitive Reverse Voltage  
Average Rectified Forward Current  
200  
mA  
IFSM  
Non-repetitive Peak Forward Surge Current  
Pulse Width = 1.0 second  
1.0  
4.0  
A
A
Pulse Width = 1.0 microsecond  
TSTG  
TJ  
Storage Temperature Range  
-65 to +200  
175  
°C  
°C  
Operating Junction Temperature  
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.  
NOTES:  
1) These ratings are based on a maximum junction temperature of 200 degrees C.  
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle  
operations.  
Thermal Characteristics  
Symbol  
PD  
Parameter  
Power Dissipation  
Thermal Resistance, Junction to Ambient  
Value  
500  
Units  
mW  
RθJA  
300  
°C/W  
Electrical Characteristics TA = 25°C unless otherwise noted  
Symbol  
Parameter  
Test Conditions  
Min.  
Max.  
Units  
VR  
Breakdown Voltage  
IR = 100μA  
IR = 5.0μA  
100  
75  
V
V
VF  
IR  
Forward Voltage  
Reverse Leakage  
IF = 20mA  
1.0  
V
VR = 20V  
VR = 20V, TA = 150°C  
25  
50  
nA  
μA  
CT  
trr  
Total Capacitance  
VR = 0, f = 1.0MHz  
2.0  
4.0  
pF  
ns  
Reverse Recovery Time IF = 10mA, VR = 6.0V  
Irr = 1.0mA, RL = 100Ω  
© 2011 Fairchild Semiconductor Corporation  
1N4447 Rev. A0  
www.fairchildsemi.com  
1

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