型号 | 品牌 | 描述 | 获取价格 | 数据表 |
1N4446.TR | TI | DIODE 100 V, SILICON, SIGNAL DIODE, DO-35, Signal Diode |
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1N4446/A52R | NXP | DIODE 0.2 A, 75 V, SILICON, SIGNAL DIODE, DO-35, HERMETIC SEALED, GLASS, SC-40, 2 PIN, Sig |
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1N4446136 | NXP | DIODE 0.2 A, 75 V, SILICON, SIGNAL DIODE, DO-35, Signal Diode |
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1N4446-1E3 | MICROSEMI | Rectifier Diode, 1 Element, 0.2A, 75V V(RRM), Silicon, DO-204AH, ROHS COMPLIANT, HERMETIC |
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1N4446BK | CENTRAL | Rectifier Diode, 1 Element, 0.15A, 100V V(RRM), Silicon, DO-35 |
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1N4446BKLEADFREE | CENTRAL | Rectifier Diode, 1 Element, 0.15A, 100V V(RRM), Silicon, DO-35 |
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