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1N4148WSGV PDF预览

1N4148WSGV

更新时间: 2024-11-16 18:09:47
品牌 Logo 应用领域
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页数 文件大小 规格书
4页 450K
描述
Reverse Voltage Vr : 100 V;Forward Current Io : 150 mA;Max Surge Current : 2.0 A;Forward Voltage Vf : 1.0 V;Reverse Current Ir : 5 uA;Recovery Time : 4 ns;Package / Case : SOD-323;Mounting Style : SMT/SMD;Certified (AEC-Q101...etc) : AEC-Q101

1N4148WSGV 数据手册

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1N4148WSGV  
FAST SWITCHING DIODE  
VOLTAGE 75 Volts CURRENT 150 mAmperes  
FEATURES  
* Flat Lead SOD-323 Small Outline Plastic Package  
SOD-323  
* Surface Device Type Mounting  
* Fast Switching Device (Trr<4.0nS)  
* Moisture Sensitivity Level 1  
* General Purpose Diodes  
* Clip Bonding Construction,Good Thermal Capability  
* Pb Free Version and ROHS Compliant  
* Matte Tin(Sn) Lead Finish with Nicke(Ni) Underplate  
* Band Indicates Cathode  
* P/N suffix V means AEC-Q101 qualified, e.g:1N4148WSGV  
* P/N suffix V means Halogen-free  
Marking:T4  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS  
Ratings at 25 oC ambient temperature unless otherwise specified.  
Single phase, half wave, 60 Hz, resistive or inductive load.  
For capacitive load, derate current by 20%.  
O
Absolute Maximum Ratings (@ T  
A
=25 C unless otherwise noted)  
SYMBOL  
RSM  
1N4148WSGV  
UNITS  
Volts  
RATINGS  
V
Non-Repetitive Peak Reverse Voltage  
Repetitive Peak Reverse Voltage  
Continuous Forward Current  
100  
75  
V
RRM  
Volts  
mAmps  
Amps  
I
O
150  
0.3  
FRM  
I
Repetitive Peak Forward Current  
Peak Forward Surge Current 8.3 ms single half sine-wave  
superimposed on rated load (JEDEC method)  
2
I
Amps  
A2S  
FSM  
I2T  
Typical Current Square Time  
0.02  
Power Dissipation  
P
D
200  
+150  
mW  
OC  
OC  
Operating Junction Temperature  
Storage Temperature Range  
T
J
T
-65 to + 150  
STG  
These ratings are limiting values above which the serviceability of the diode may be impaired.  
O
ELECTRICAL CHARACTERISTICS (@T  
A
=25 C unless otherwise noted)  
SYMBOL  
VF  
1N4148WSGV  
1.0  
UNITS  
Volts  
CHARACTERISTICS  
@IF=10mA  
Forward Voltage  
@VR=20V  
@VR=75V  
25  
5
nAmps  
uAmps  
Reverse Leakage Current  
Breakdown Voltage  
I
R
@IR=100uA  
@IR=5uA  
100  
75  
Volts  
VR  
Reverse Recovery Time (I =10mA,I =60mA,R =100 ,I =1mA)  
RR  
Trr  
4
4
nS  
pF  
F
R
L
Capacitance (V =0V,f=1MHz)  
Cj  
R
2021-09  
REV:A  

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