1N4148
SMALL SIGNAL SWITCHING DIODE
DO-34(GLASS)
DO-35(GLASS)
FEATURES
Silicon epitaxial planar diode
Switching diodes
500mw power dissipation
High temperature soldering guaranteed
1.0 2(26.0)
MIN.
1.0 2(26.0)
MIN.
0.079(2.0)
MAX
0.079(2.0)
MAX
250 C/10 seconds,0.375”(9.5mm) lead length,
5 lbs. (2.3kg) tension
0.106 (2.9)
MAX
0.165 (4.2)
MAX
MECHANICAL DATA
Case: DO-34\DO-35 glass sealed envelope.
Terminals: Plated axial leads, solderable per MIL-STD-750,
Method 2026
1.0 2(26.0)
MIN.
1.0 2(26.0)
MIN.
0.017(0.42)
TYP
0.020(0.52)
TYP
Polarity: Color band denotes cathode end
Mounting Position: Any
Weight:0.003 ounce, 0.09 grams(DO-34)
0.005 ounce, 0.14 grams(DO-35)
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 C ambient temperature unless otherwise specified.
Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%.
1N4148
UNITS
SYMBOLS
VRRM
Maximum repetitive peak reverse voltage
Maximum RMS voltage
100
75
VOLTS
VOLTS
VRMS
Maximum average forward rectified current
0.375”(9.5mm) lead length at TA=25 C
Peak forward surge current
I(AV)
IFSM
150
mAmps
500
1.0
8.3ms single half sine-wave superimposed on
rated load (JEDEC Method)
mAmps
Volts
VF
IR
Maximum instantaneous forward voltage at 10mA
Maximum DC reverse current
at rated DC blocking voltage
Maximum reverse recovery time
TA=25 C VR=75V
TA=100 C VR=20V
(NOTE 1)
5.0
50
u
A
ns
trr
CJ
4.0
Typical junction capacitance (NOTE 2)
Operating junction and storage temperature range
NOTES:
pF
C
4.0
TJ,TSTG
-65 to +200
1.Test condition:IF=10mA,IR=10mA,Irr=1mA,VR=6V,RL=100W.
2.Measured at 1.0 MHz and applied reverse voltage of 4.0 volts
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