Datasheet > 1N4008V

1N4008V

更新时间： 2024-10-02 18:09:51

品牌	Logo	应用领域
RECTRON		/
页数	文件大小	规格书
8页	218K
描述
Reverse Voltage Vr : 1200 V;Forward Current Io : 1.0 A;Max Surge Current : 30 A;Forward Voltage Vf : 1.0 V;Reverse Current Ir : 0.2 uA;Recovery Time :;Package / Case : DO-41;Mounting Style : Through Hole;Certified (AEC-Q101...etc) : AEC-Q101

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

1N4008V 数据手册

1N4008V

SILICON RECTIFIER

VOLTAGE RANGE 1200 Volts CURRENT 1.0 Ampere

FEATURES

* Low cost

* Low leakage

* Low forward voltage drop

* High current capability

* P/N suffix V means AEC-Q101 qualified, e.g:1N4008V

* P/N suffix V means Halogen-free

MECHANICAL DATA

* Case: Molded plastic

* Epoxy: Device has UL flammability classification 94V-O

* Lead: MIL-STD-202E method 208C guaranteed

* Mounting position: Any

.034 (0.9)

DIA.

.028 (0.7)

1.0 (25.4)

MIN.

* Weight: 0.33 gram

.205 (5.2)

.166 (4.2)

.107 (2.7)

DIA.

.080 (2.0)

1.0 (25.4)

MIN.

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Ratings at 25 ^oC ambient temperature unless otherwise specified.

Single phase, half wave, 60 Hz, resistive or inductive load.

For capacitive load, derate current by 20%.

Dimensions in inches and (millimeters)

MAXIMUM RATINGS (At T

= 25^oC unless otherwise noted)

RATINGS

SYMBOL

UNITS

Volts

1N4008V

RRM

Maximum Recurrent Peak Reverse Voltage

Maximum RMS Voltage

1200

840

RMS

Maximum DC Blocking Voltage

1200

Maximum Average Forward Rectified Current

1.0

Amps

at T

= 75^oC

Peak Forward Surge Current 8.3 ms single half sine-wave

superimposed on rated load (JEDEC method)

Typical Current Squared Time

FSM

I²T

Amps

A²S

⁰C/ W

⁰C

3.74

Typical Junction Capacitance (Note)

Typical Thermal Resistance

Operating and Storage Temperature Range

J A

, TSTG

-55 to + 150

ELECTRICAL CHARACTERISTICS (At T

= 25^oC unless otherwise noted)

1N4008V

1.0

0.2

SYMBOL

UNITS

Volts

CHARACTERISTICS

Maximum Instantaneous Forward Voltage at 1.0A DC

Maximum DC Reverse Current

at Rated DC Blocking Voltage

= 25^oC

uAmps

= 150^oC

200

Maximum Full Load Reverse Current Average, Full Cycle

.375” (9.5mm) lead length at T

= 75^oC

NOTES : 1.Measured at 1 MH

and applied reverse voltage of 4.0 volts

2020-11

REV:O

12 3 4 5 6 7 8

中文翻译

下载PDF

与1N4008V相关器件

型号	品牌	获取价格	描述	数据表
1N4009	FAIRCHILD	获取价格	Ultra High Speed Diodes
1N4009	NSC	获取价格	Diode Data
1N4009	TDK	获取价格	Rectifier Diode, 1 Element, 0.15A, 25V V(RRM), Silicon, DO-7, GLASS PACKAGE-2
1N4009R	MICROSEMI	获取价格	Rectifier Diode, 1 Element, 0.1A, 35V V(RRM), Silicon
1N4009X	MICROSEMI	获取价格	Rectifier Diode, 1 Element, 0.1A, 35V V(RRM), Silicon
1N400X	VISHAY	获取价格	1.0A RECTIFIER
1N400x Series	MERITEK	获取价格	1N400x Series \| Silicon Rectifier 1.0A DO-41 Axial Leaded
1N400xGPHM3	VISHAY	获取价格	Glass Passivated Junction Plastic Rectifier
1N400XGP-M3	VISHAY	获取价格	Glass Passivated Junction Plastic Rectifier
1N400XLB	CYSTEKEC	获取价格	1.0Amp. Glass Passivated Silicon Rectifiers