Datasheet > 1N4007W

1N4007W

更新时间： 2024-11-02 01:03:15

品牌	Logo	应用领域
芯派科技 - SEMIPOWER		/
页数	文件大小	规格书
3页	121K
描述
Surface Mount General Purpose Silicon Rectifiers

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中文翻译

获取价格

数据手册

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1N4007W 数据手册

1N4001W THRU 1N4007W

Surface Mount General Purpose Silicon Rectifiers

Reverse Voltage - 50 to 1000 V

PINNING

DESCRIPTION

Cathode

Forward Current - 1 A

FEATURES

Anode

▪For surface mounted applications

▪Low profile package

▪Glass Passivated Chip Junction

▪Ideal for automated placement

▪Lead free in comply with EU RoHS 2011/65/EU directives

Top View

Marking Code： A1-A7

Simplified outline SOD-123FL and symbol

MECHANICAL DATA

▪Case: SOD-123FL

▪Terminals: Solderable per MIL-STD-750, Method 2026

▪Approx. Weight: 15mg / 0.00053oz

Maximum Ratings and Electrical characteristics

Ratings at 25 °C ambient temperature unless otherwise specified.

Single phase half-wave 60 Hz, resistive or inductive load, for capacitive load current derate by 20 %.

Symbols

V_RRM

1N4001W 1N4002W 1N4003W 1N4004W 1N4005W 1N4006W 1N4007W

Parameter

Maximum Repetitive Peak Reverse Voltage

Maximum RMS voltage

Units

100

200

140

200

400

280

400

600

420

600

800

560

800

1000

700

V_RMS

Maximum DC Blocking Voltage

V_DC

100

1000

Maximum Average Forward Rectified Current

at T_c= 125 °C

I_F(AV)

Peak Forward Surge Current 8.3 ms Single Half

Sine Wave Superimposed on Rated Load

I_FSM

Maximum Instantaneous Forward Voltage at 1 A

V_F

1.1

Maximum DC Reverse Current

at Rated DC Blocking Voltage

T_a= 25 °C

T_a=125 °C

μA

I_R

Typical Junction Capacitance^（1）

Typical Thermal Resistance ^（2）

C_j

°C/W

°C

R_θJA

Operating and Storage Temperature Range

T_j, T_stg

-55 ~ +150

（1）Measured at 1 MHz and applied reverse voltage of 4 V D.C

（2）P.C.B. mounted with 2.0" X 2.0" (5 X 5 cm) copper pad areas.

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