Datasheet > 1N4006G-TB

1N4006G-TB

更新时间： 2024-02-03 17:19:45

品牌	Logo	应用领域
WTE		二极管
页数	文件大小	规格书
3页	55K
描述
Rectifier Diode, 1 Element, 1A, 800V V(RRM), Silicon, DO-41, PLASTIC PACKAGE-2

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技术参数
数据手册

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1N4006G-TB 技术参数

生命周期：	Active	零件包装代码：	DO-41
包装说明：	O-PALF-W2	针数：	2
Reach Compliance Code：	compliant	ECCN代码：	EAR99
HTS代码：	8541.10.00.80	风险等级：	5.02
其他特性：	HIGH RELIABILITY	外壳连接：	ISOLATED
配置：	SINGLE	二极管元件材料：	SILICON
二极管类型：	RECTIFIER DIODE	JEDEC-95代码：	DO-41
JESD-30 代码：	O-PALF-W2	元件数量：	1
端子数量：	2	最高工作温度：	175 °C
最低工作温度：	-65 °C	最大输出电流：	1 A
封装主体材料：	PLASTIC/EPOXY	封装形状：	ROUND
封装形式：	LONG FORM	最大重复峰值反向电压：	800 V
表面贴装：	NO	端子形式：	WIRE
端子位置：	AXIAL	Base Number Matches：	1

1N4006G-TB 数据手册

WTE

POWER SEMICONDUCTORS

1N4001G – 1N4007G

1.0A GLASS PASSIVATED RECTIFIER

Features

Glass Passivated Die Construction

Low Forward Voltage Drop

High Current Capability

High Reliability

High Surge Current Capability

Mechanical Data

Case: Molded Plastic

Terminals: Plated Leads Solderable per

MIL-STD-202, Method 208

Polarity: Cathode Band

Weight: 0.35 grams (approx.)

Mounting Position: Any

DO-41

Dim

Min

25.4

4.06

0.71

2.00

Max

—

5.21

0.864

2.72

Marking: Type Number

All Dimensions in mm

Maximum Ratings and Electrical Characteristics ^@T_A^{=25°C unless otherwise specified}

Single Phase, half wave, 60Hz, resistive or inductive load.

For capacitive load, derate current by 20%.

Characteristic

Symbol

Unit

4001G 4002G 4003G 4004G 4005G 4006G 4007G

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

V^RRM

V^RWM

V^R

100

200

140

400

600

420

800

560

1000

700

RMS Reverse Voltage

V^R(RMS)

I^O

280

1.0

Average Rectified Output Current

(Note 1)

@T_A= 75°C

Non-Repetitive Peak Forward Surge Current

8.3ms Single half sine-wave superimposed on

rated load (JEDEC Method)

I^FSM

Forward Voltage

@I_F= 1.0A

V^FM

I^RM

1.0

µA

Peak Reverse Current

At Rated DC Blocking Voltage @T_A= 100°C

@T_A= 25°C

5.0

Typical Junction Capacitance (Note 2)

C^j

8.0

Typical Thermal Resistance Junction to Ambient

(Note 1)

R^ꢀ^JA

100

K/W

Operating Temperature Range

Storage Temperature Range

T^j

-65 to +175

°C

T^STG

Note: 1. Leads maintained at ambient temperature at a distance of 9.5mm from the case

2. Measured at 1.0 MHz and Applied Reverse Voltage of 4.0V D.C.

1N4001G – 1N4007G

1 of 3

12 3

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