Datasheet > 1N4006G

1N4006G

更新时间： 2024-10-28 12:51:59

品牌	Logo	应用领域
辰达行 - MDD		/
页数	文件大小	规格书
2页	123K
描述
1N4001G THRU 1N4007G

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

1N4006G 数据手册

1N4001G THRU 1N4007G

GLASS PASSIVATED SILICON RECTIFIER

1.0 Ampere

Reverse Voltage - 50 to 1000 Volts Forward Current -

FEATURES

DO-41

The plastic package carries Underwriters Laboratory

Flammability Classification 94V-0

Construction utilizes void-free

molded plastic technique

1.0 (25.4)

MIN.

Low reverse leakage

High forward surge current capability

High temperature soldering guaranteed:

0.107 (2.7)

0.080 (2.0)

DIA.

250 C/10 seconds,0.375”(9.5mm) lead length,

5 lbs. (2.3kg) tension

0.205 (5.2)

0.160(4.1)

MECHANICAL DATA

1.0 (25.4)

MIN.

Case: JEDEC DO-41 molded plastic body

Terminals: Plated axial leads, solderable per MIL-STD-750,

Method 2026

0.034 (0.86)

0.028 (0.70)

DIA.

Polarity: Color band denotes cathode end

Mounting Position: Any

Dimensions in inches and (millimeters)

Weight:0.012 ounce, 0.33 grams

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Ratings at 25 C ambient temperature unless otherwise specified.

Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%.

SYMBOLS

MDD Catalog

UNITS

800 1000 VOLTS

560 700

VOLTS

Number

4006G 4007G

4001G 4002G 4003G 4004G 4005G

Maximum repetitive peak reverse voltage

Maximum RMS voltage

100

200 400

140 280

200 400

600

420

600

VRRM

VRMS

VDC

100

800 1000 VOLTS

Maximum DC blocking voltage

Maximum average forward rectified current

0.375”(9.5mm) lead length at TA=75 C

Peak forward surge current

I(AV)

1.0

Amp

IFSM

30.0

1.1

8.3ms single half sine-wave superimposed on

rated load (JEDEC Method)

Amps

Volts

Maximum instantaneous forward voltage at 1.0A

Maximum DC reverse current

at rated DC blocking voltage

TA=25 C

5.0

50.0

TA=100 C

Typical junction capacitance (NOTE 1)

RθJA

C/W

15.0

50.0

Typical thermal resistance (NOTE 2)

Operating junction and storage temperature range

TJ,TSTG

-50 to +150

Note:

1.Measured at 1MHz and applied reverse voltage of 4.0V D.C.

”

(9.5mm)lead length,P.C.B. mounted

2.Thermal resistance from junction to ambient at 0.375

MDD ELECTRONIC

中文翻译

下载PDF

与1N4006G相关器件

型号	品牌	获取价格	描述	数据表
1N4006-G	COMCHIP	获取价格	General Purpose Rectifier
1N4006G(LS)	DIODES	获取价格	1.0A GLASS PASSIVATED RECTIFIERS
1N4006G-A	GOOD-ARK	获取价格	1.0A GLASS PASSIVATED RECTIFIER
1N4006G-B	GOOD-ARK	获取价格	1.0A GLASS PASSIVATED RECTIFIER
1N4006GH01	RECTRON	获取价格	Rectifier Diode, 1 Element, 1A, 800V V(RRM), Silicon, DO-41,
1N4006GH02-2	RECTRON	获取价格	Rectifier Diode, 1 Element, 1A, 800V V(RRM), Silicon, DO-41,
1N4006GH02-3	RECTRON	获取价格	Rectifier Diode, 1 Element, 1A, 800V V(RRM), Silicon, DO-41,
1N4006GH02-5	RECTRON	获取价格	Rectifier Diode, 1 Element, 1A, 800V V(RRM), Silicon, DO-41,
1N4006GH03-1	RECTRON	获取价格	Rectifier Diode, 1 Element, 1A, 800V V(RRM), Silicon, DO-41,
1N4006GH03-2	RECTRON	获取价格	Rectifier Diode, 1 Element, 1A, 800V V(RRM), Silicon, DO-41,