1N4005G-T3-LF

更新时间： 2024-11-29 13:03:31

品牌	Logo	应用领域
固锝 - GOOD-ARK		二极管
页数	文件大小	规格书
2页	87K
描述
Rectifier Diode, 1 Element, 1A, 600V V(RRM), Silicon, DO-41, ROHS COMPLIANT, PLASTIC PACKAGE-2

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中文翻译

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数据手册

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1N4005G-T3-LF 数据手册

Glass Passivated Standard Rectifier

1N4001G THRU 1N4007G

Current: 1A

Votlage: 50 ~ 1000V

DO-41

.034(.86)

.028(.71)

Features

DIA.

ꢀ Low forward voltage drop

1.0(25.4)

MIN.

ꢀ High current capability

ꢀ Low reverse leakage current

ꢀ High Surge current capability

.205(5.2)

.160(4.1)

Mechanical Data

.107(2.7)

DIA.

.080(2.0)

ꢀ Case: Molded plastic DO-41

1.0(25.4)

ꢀ Epoxy: UL 94-0 rate flame retardant

MIN.

ꢀ Terminal: Solderable per MIL-STD-202

method 208 guaranteed

ꢀ Polarity: Color band denotes cathode end

Dimensions in inches and (millimeters)

ꢀ Mounting position: Any

ꢀ Weight: 0.34 gram

Maximum Rating and Electrical Characteristics

Rating at 25^oC ambient temperature unless otherwise specified. Single phase, half wave, 60Hz, resistive or

inductive load. For capacitive load, derate current by 20%.

SYMBOL

UNIT

4001G 4002G 4003G 4004G 4005G 4006G 4007G

Maximum Recurrent Peak Reverse Voltage

Maximum RMS Voltage

VRRM

VRMS

VDC

100

200

140

200

400

280

400

600

420

600

800

560

800

1000

700

Maximum DC Blocking Voltage

100

1000

Maximum Average Forward Rectified

Current TL=55^oC

I(AV)

IFSM

1.0

Peak Forward Surge Current, 8.3ms single

Half sine-wave superimposed on rated load

(JEDEC method)

Maximum Instantaneous Forward Voltage

@ 1.0 A

1.1

Maximum DC Reverse Current @TJ=25^oC

At Rated DC Blocking Voltage @TJ=125^oC

5.0

100

Typical junction Capacitance (Note 1)

Typical Thermal Resistance (Note 2)

^oC/W

Operating Junction and Storage

Temperature Range

^oC

TJ,TSTG

-55 to +150

NOTES : (1) Thermal Resistance junction to lead.

(2) Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts DC.

“-G” suffix designates RoHS compliant Version

中文翻译

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