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1N4005-BP PDF预览

1N4005-BP

更新时间: 2024-10-30 13:02:39
品牌 Logo 应用领域
美微科 - MCC 二极管
页数 文件大小 规格书
3页 88K
描述
Rectifier Diode, 1 Element, 1A, 600V V(RRM), Silicon, DO-41, ROHS COMPLIANT, PLASTIC PACKAGE-2

1N4005-BP 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:DO-41
包装说明:ROHS COMPLIANT, PLASTIC PACKAGE-2针数:2
Reach Compliance Code:not_compliantECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.02
其他特性:METALLURGICALLY BONDED外壳连接:ISOLATED
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODE最大正向电压 (VF):1 V
JEDEC-95代码:DO-41JESD-30 代码:O-PALF-W2
JESD-609代码:e3湿度敏感等级:1
最大非重复峰值正向电流:30 A元件数量:1
端子数量:2最高工作温度:150 °C
最大输出电流:1 A封装主体材料:PLASTIC/EPOXY
封装形状:ROUND封装形式:LONG FORM
峰值回流温度(摄氏度):NOT SPECIFIED认证状态:Not Qualified
最大重复峰值反向电压:600 V最大反向恢复时间:2 µs
子类别:Rectifier Diodes表面贴装:NO
端子面层:Matte Tin (Sn)端子形式:WIRE
端子位置:AXIAL处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

1N4005-BP 数据手册

 浏览型号1N4005-BP的Datasheet PDF文件第2页浏览型号1N4005-BP的Datasheet PDF文件第3页 
M C C  
1N4001  
THRU  
1N4007  
ꢀꢁꢂꢃꢄꢅꢆꢄꢇꢇꢈꢃꢂꢁꢉꢊꢅꢆomponents  
21201 Itasca Street Chatsworth  
ꢆꢋꢅꢌꢍꢎꢍꢍ  
ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ  
$ꢉ%ꢒꢅ   ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ  
ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ  
Features  
·
·
·
Low Current Leakage  
1 Amp Rectifier  
50 - 1000 Volts  
Metalurgically Bonded Construction  
Low Cost  
Maximum Ratings  
DO-41  
·
·
·
Operating Temperature: -55°C to +150°C  
Storage Temperature: -55°C to +150°C  
Maximum Thermal Resistance; 20°C/W Junction To Lead  
MCC  
Catalog  
Number  
Device  
Marking  
Maximum  
Recurrent  
Peak  
Reverse  
Voltage  
50V  
100V  
200V  
400V  
600V  
800V  
1000V  
Maximum Maximum  
RMS  
DC  
Voltage  
Blocking  
Voltage  
D
1N4001  
1N4002  
1N4003  
1N4004  
1N4005  
1N4006  
1N4007  
---  
---  
---  
---  
---  
---  
---  
35V  
70V  
50V  
100V  
200V  
400V  
600V  
800V  
1000V  
A
Cathode  
140V  
280V  
420V  
560V  
700V  
Mark  
B
D
C
Electrical Characteristics @ 25°C Unless Otherwise Specified  
Average Forward  
Current  
IF(AV)  
1.0A  
TA = 75°C  
Peak Forward Surge  
Current  
IFSM  
30A  
8.3ms, half sine  
DIMENSIONS  
Maximum  
INCHES  
MIN  
.166  
.080  
.028  
MM  
MIN  
4.10  
2.00  
.70  
Instantaneous  
Forward Voltage  
Maximum DC  
Reverse Current At  
Rated DC Blocking  
Voltage  
VF  
IR  
1.1V  
IFM = 1.0A;  
TJ = 25°C*  
DIM  
A
B
C
D
MAX  
.205  
.107  
.034  
---  
MAX  
5.20  
2.70  
.90  
NOTE  
1.000  
25.40  
---  
5.0mA  
50mA  
TJ = 25°C  
TJ = 125°C  
Typical Junction  
Capacitance  
CJ  
15pF  
Measured at  
1.0MHz, VR=4.0V  
*Pulse test: Pulse width 300 msec, Duty cycle 2%  
www.mccsemi.com  

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