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1N4003-BC05-TP PDF预览

1N4003-BC05-TP

更新时间: 2024-02-06 07:11:08
品牌 Logo 应用领域
美微科 - MCC 二极管
页数 文件大小 规格书
3页 104K
描述
Rectifier Diode, 1 Element, 1A, 200V V(RRM), Silicon, DO-41, DO-41, 2 PIN

1N4003-BC05-TP 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:DO-41
包装说明:DO-41, 2 PIN针数:2
Reach Compliance Code:not_compliantECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.58
其他特性:METALLURGICALLY BONDED外壳连接:ISOLATED
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODEJEDEC-95代码:DO-41
JESD-30 代码:O-XALF-W2JESD-609代码:e3
元件数量:1端子数量:2
最大输出电流:1 A封装主体材料:UNSPECIFIED
封装形状:ROUND封装形式:LONG FORM
峰值回流温度(摄氏度):NOT SPECIFIED认证状态:Not Qualified
最大重复峰值反向电压:200 V表面贴装:NO
端子面层:Matte Tin (Sn)端子形式:WIRE
端子位置:AXIAL处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

1N4003-BC05-TP 数据手册

 浏览型号1N4003-BC05-TP的Datasheet PDF文件第2页浏览型号1N4003-BC05-TP的Datasheet PDF文件第3页 
M C C  
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20736 Marilla Street Chatsworth  
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$ꢉ%ꢒꢅ   ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ  
TM  
Micro Commercial Components  
1N4003-BC05  
Features  
·
·
·
Low Current Leakage  
1 Amp Rectifier  
200 Volts  
Metalurgically Bonded Construction  
Low Cost  
Maximum Ratings  
·
·
·
Operating Temperature: -50°C to +125°C  
DO-41  
Storage Temperature: -50°C to +150°C  
Maximum Thermal Resistance; 20°C/W Junction To Lead  
F
MCC  
Catalog  
Number  
Device  
Marking  
Maximum  
Reccurrent  
Peak  
Reverse  
Voltage  
200V  
Maximum Maximum  
E
RMS  
DC  
Voltage  
Blocking  
Voltage  
H
1N4003-BC05  
---  
140V  
200V  
G
D
C
Electrical Characteristics @ 25°C Unless Otherwise Specified  
Average Forward  
Current  
IF(AV)  
1.0A  
TA = 75°C  
Peak Forward Surge  
Current  
IFSM  
30A  
8.3ms, half sine  
A
Maximum  
Instantaneous  
Forward Voltage  
Maximum DC  
Reverse Current At  
Rated DC Blocking  
Voltage  
VF  
IR  
1.1V  
IFM = 1.0A;  
TJ = 25°C*  
B
5.0mA  
50mA  
TJ = 25°C  
TJ = 125°C  
INCHES  
MIN  
MM  
DIM  
A
B
C
D
E
F
G
H
MAX  
.383  
.034  
.290  
.107  
.080  
.284  
.025  
53o  
MIN  
9.47  
.70  
MAX  
9.73  
.90  
NOTE  
.373  
.028  
.280  
.080  
.070  
.274  
.015  
47o  
Typical Junction  
Capacitance  
CJ  
15pF  
Measured at  
1.0MHz, VR=4.0V  
7.11  
2.00  
1.78  
6.96  
.38  
7.37  
2.70  
2.03  
7.21  
.64  
*Pulse test: Pulse width 300 msec, Duty cycle 2%  
47o  
53o  
www.mccsemi.com  
Revision: 3  
2002/12/31  

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