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1N4002S PDF预览

1N4002S

更新时间: 2024-02-11 10:42:12
品牌 Logo 应用领域
BYTES 二极管
页数 文件大小 规格书
2页 153K
描述
1.0 AMP SILICON RECTIFIERS

1N4002S 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:DO-41包装说明:O-XALF-W2
针数:2Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.10.00.80
风险等级:5.1外壳连接:ISOLATED
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODEJEDEC-95代码:DO-41
JESD-30 代码:O-XALF-W2元件数量:1
端子数量:2最大输出电流:1 A
封装主体材料:UNSPECIFIED封装形状:ROUND
封装形式:LONG FORM峰值回流温度(摄氏度):NOT SPECIFIED
认证状态:Not Qualified最大重复峰值反向电压:100 V
表面贴装:NO端子形式:WIRE
端子位置:AXIAL处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

1N4002S 数据手册

 浏览型号1N4002S的Datasheet PDF文件第2页 
1N4001S THRU 1N4007S  
1.0 AMP SILICON RECTIFIERS  
VOLTAGE RANGE  
50 to 1000 Volts  
CURRENT  
1.0 Ampere  
FEATURES  
* Low forward voltage drop  
* Low leakage current  
* High reliability  
A-405  
.107(2.7)  
.080(2.0)  
DIA.  
* High current capability  
1.0(25.4)  
MIN.  
MECHANICAL DATA  
* Case: Molded plastic  
.205(5.2)  
.166(4.2)  
* Epoxy: UL 94V-0 rate flame retardant  
* Lead: Axial leads, solderable per MIL-STD-202,  
method 208 guranteed  
* Polarity: Color band denotes cathode end  
* Mounting position: Any  
1.0(25.4)  
MIN.  
.025(.6)  
*
Weight: 0.22 grams  
.021(.5)  
DIA.  
Dimensions in inches and (millimeters)  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS  
Rating 25 C ambient temperature uniess otherwies specified.  
Single phase half wave, 60Hz, resistive or inductive load.  
For capacitive load, derate current by 20%.  
1N4001S 1N4002S 1N4003S 1N4004S 1N4005S 1N4006S 1N4007S UNITS  
TYPE NUMBER  
Maximum Recurrent Peak Reverse Voltage  
Maximum RMS Voltage  
50  
35  
50  
100  
70  
200  
140  
200  
400  
280  
400  
600  
420  
600  
800  
560  
800  
1000  
700  
V
V
V
Maximum DC Blocking Voltage  
100  
1000  
Maximum Average Forward Rectified Current  
.375"(9.5mm) Lead Length at Ta=75 C  
1.0  
A
A
Peak Forward Surge Current, 8.3 ms single half sine-wave  
superimposed on rated load (JEDEC method)  
Maximum Instantaneous Forward Voltage at 1.0A  
Maximum DC Reverse Current  
30  
V
µA  
1.0  
5.0  
Ta=25 C  
at Rated DC Blocking Voltage  
Typical Junction Capacitance (Note 1)  
Ta=100 C  
50  
µA  
pF  
15  
50  
Typical Thermal Resistance RθJA (Note 2)  
Operating and Storage Temperature Range TJ, TSTG  
C/W  
C
-65 +150  
NOTES:  
1. Measured at 1MHz and applied reverse voltage of 4.0V D.C.  
2. Thermal Resistance from Junction to Ambient .375" (9.5mm) lead length.  

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