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1N4002GP_15 PDF预览

1N4002GP_15

更新时间: 2024-11-27 01:04:27
品牌 Logo 应用领域
德欧泰克 - DIOTEC /
页数 文件大小 规格书
2页 96K
描述
Glass Passivated Silicon Rectifier Diodes

1N4002GP_15 数据手册

 浏览型号1N4002GP_15的Datasheet PDF文件第2页 
1N4002GP ... 1N4007GP, 1N4002-Q ... 1N4007-Q  
1N4002GP ... 1N4007GP, 1N4002-Q ... 1N4007-Q  
Glass Passivated Silicon Rectifier Diodes  
Glaspassivierte Silizium-Gleichrichterdioden  
Version 2015-07-27  
Nominal current  
Nennstrom  
1 A  
Repetitive peak reverse voltage  
Periodische Spitzensperrspannung  
100...1000 V  
Ø 2.6-0.1  
Plastic case  
~DO-41  
Kunststoffgehäuse  
~DO-204AC  
Weight approx.  
Gewicht ca.  
0.4 g  
Plastic material has UL classification 94V-0  
Gehäusematerial UL94V-0 klassifiziert  
Ø 0.77±0.07  
Standard packaging taped in ammo pack  
Standard Lieferform gegurtet in Ammo-Pack  
Dimensions - Maße [mm]  
Maximum ratings  
Grenzwerte  
Type  
Typ  
Repetitive peak reverse voltage  
Periodische Spitzensperrspannung  
VRRM [V]  
Surge peak reverse voltage  
Stoßspitzensperrspannung  
VRSM [V]  
1N4002GP / 1N4002-Q  
1N4004GP / 1N4004-Q  
1N4005GP / 1N4005-Q  
1N4007GP / 1N4007-Q  
100  
400  
100  
400  
600  
600  
1000  
1000  
Max. average forward rectified current, R-load  
Dauergrenzstrom in Einwegschaltung mit R-Last  
TA = 75°C  
TA = 100°C  
IFAV  
IFRM  
IFSM  
i2t  
1 A 1)  
0.8 A 1)  
5.4 A 1)  
Repetitive peak forward current  
Periodischer Spitzenstrom  
f > 15 Hz  
TA = 25°C  
TA = 25°C  
Peak forward surge current, 50/60 Hz half sine-wave  
Stoßstrom für eine 50/60 Hz Sinus-Halbwelle  
27/30 A  
3.6 A2s  
Rating for fusing – Grenzlastintegral, t < 10 ms  
Junction temperature – Sperrschichttemperatur  
Storage temperature – Lagerungstemperatur  
Tj  
TS  
-50...+175°C  
-50...+175°C  
1
Valid, if leads are kept at ambient temperature at a distance of 10 mm from case  
Gültig, wenn die Anschlussdrähte in 10 mm Abstand vom Gehäuse auf Umgebungstemperatur gehalten werden  
© Diotec Semiconductor AG  
http://www.diotec.com/  
1
 

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