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1N4001 THRU 1N4007 PDF预览

1N4001 THRU 1N4007

更新时间： 2024-11-18 05:34:43
品牌 Logo 应用领域
其他 - ETC 光电二极管
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1N4001 THRU 1N4007 PDF

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1N4001 THRU 1N4007 数据手册

 浏览型号1N4001 THRU 1N4007的Datasheet PDF文件第2页 
DONGGUAN FUYAT ELECTRONICS CO.， LTD  
VOLTAGE RANGE  
50 to 1000 Volts  
1.0 Ampere  
1N4001 THRU 1N4007  
CURRENT  
DO-41  
FEATURES  
·
·
·
·
·
Low coat construction  
1.0(25.4)  
MIN.  
Low forward voltage drop  
Low reverse leakage  
High forward surge current capability  
High temperature soldering guaranteed:  
260℃/10 secods/.375”(9.5mm)lead length at 5 lbs(2.3kg) tension  
.205(5.2)  
.166(4.2)  
.107(2.7)  
DIA.  
.080(2.0)  
MECHANICAL DATA  
1.0(25.4)  
MIN.  
·
·
·
·
·
·
Case: Transfer molded plastic  
Epoxy: UL94V-O rate flame retardant  
Polarity: Color band denotes cathode end  
Lead: Plated axial lead, solderable per MIL-STD-202E method 208C  
Mounting position: Any  
.034(0.9)  
DIA.  
.028(0.7)  
Dimensions in inches and (millimeters)  
Weight: 0.012 ounce, 0.33 grams  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS  
·
·
·
Ratings at 25OC ambient temperature unless otherwise specified  
Single Phase, half wave, 60Hz, resistive or inductive load  
For capacitive load derate current by 20%  
SYMBOLS  
VRRM  
UNIT  
1N4001 1N4002 1N4003 1N4004 1N4005 1N4006 1N4007  
Maximum Repetitive Peak Reverse Voltage  
Maximum RMS Voltage  
50  
35  
50  
100  
70  
200  
140  
200  
400  
280  
400  
600  
420  
600  
800  
560  
800  
1000 Volts  
700 Volts  
VRMS  
Maximum DC Blocking Voltage  
100  
1000 Volts  
VDC  
Maximum Average Forward Rectified Current  
1.0  
Amps  
I(AV)  
0.375”(9.5mm) lead length at TA= 25  
℃
Peak Forward Surge Current  
8.3mS single half sine wave superimposed on  
rated load (JEDEC method)  
30  
Amps  
Volts  
µA  
IFSM  
VF  
IR  
Maximum Instantaneous Forward Voltage @ 1.0A  
1.1  
5.0  
50  
TA = 25  
℃
Maximum DC Reverse Current at Rated  
DC Blocking Voltage per element  
TA = 100  
℃
Maximum Full Load Reverse Current, full cycle average  
0.375”(9.5mm)lead length at TL=75  
30  
13  
50  
µA  
pF  
IR(AV)  
CJ  
℃
Typical Junction Capacitance (Note 1)  
Typical Thermal Resistance (Note 2)  
RθJA  
℃/W  
Operating Junction Temperature Range  
Storage Temperature Range  
Notes:  
-55 to +150  
-55 to +150  
℃
℃
TJ  
TSTG  
1. Measured at 1.0MHz and Applied Reverse Voltage of 4.0V DC.  
2. Thermal Resistance from junction to terminal 6.0mm2 copper pads to each terminal.  
3. The chip size is 40mil×40mil  
DONGGUAN FUYAT ELECTRONICS CO.， LTD  
PDF 文件使用 "pdfFactory Pro" 试用版本创建 www.fineprint.cn  
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 		Rectifier Diode, 1 Element, 1A, 50V V(RRM), Silicon, DO-204AL, PLASTIC, DO-41, 2 PIN
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1N4001/4H VISHAY

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 		Rectifier Diode, 1 Element, 1A, 50V V(RRM), Silicon, DO-204AL, PLASTIC, DO-41, 2 PIN
1N4001/51 VISHAY

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 		Rectifier Diode, 1 Element, 1A, 50V V(RRM), Silicon, DO-204AL, PLASTIC, DO-41, 2 PIN
1N4001/53 VISHAY

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 		Rectifier Diode, 1 Element, 1A, 50V V(RRM), Silicon, DO-204AL, PLASTIC, DO-41, 2 PIN
1N4001/54 VISHAY

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 		Rectifier Diode, 1 Element, 1A, 50V V(RRM), Silicon, DO-204AL, PLASTIC, DO-41, 2 PIN
1N4001/56 VISHAY

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 		Rectifier Diode, 1 Element, 1A, 50V V(RRM), Silicon, DO-204AL, PLASTIC, DO-41, 2 PIN
1N4001/60 VISHAY

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 		Rectifier Diode, 1 Element, 1A, 50V V(RRM), Silicon, DO-204AL, PLASTIC, DO-41, 2 PIN

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