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1N4001H-TP PDF预览

1N4001H-TP

更新时间: 2024-11-19 20:46:07
品牌 Logo 应用领域
美微科 - MCC 二极管
页数 文件大小 规格书
3页 444K
描述
Rectifier Diode, 1 Element, 1A, 50V V(RRM), Silicon, DO-41, DO-41, 2 PIN

1N4001H-TP 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:DO-41
包装说明:DO-41, 2 PIN针数:2
Reach Compliance Code:not_compliantECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.09
其他特性:METALLURGICALLY BONDED外壳连接:ISOLATED
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODEJEDEC-95代码:DO-41
JESD-30 代码:O-XALF-W2JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:2最大输出电流:1 A
封装主体材料:UNSPECIFIED封装形状:ROUND
封装形式:LONG FORM峰值回流温度(摄氏度):NOT SPECIFIED
认证状态:Not Qualified最大重复峰值反向电压:50 V
最大反向恢复时间:2 µs表面贴装:NO
端子面层:Matte Tin (Sn)端子形式:WIRE
端子位置:AXIAL处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

1N4001H-TP 数据手册

 浏览型号1N4001H-TP的Datasheet PDF文件第2页浏览型号1N4001H-TP的Datasheet PDF文件第3页 
M C C  
1N4001H-T  
THRU  
1N4007H-T  
ꢀꢁꢂꢃꢄꢅꢆꢄꢇꢇꢈꢃꢂꢁꢉꢊꢅꢆomponents  
20736 Marilla Street Chatsworth  
ꢆꢋꢅꢌꢍꢎꢍꢍ  
ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ  
$ꢉ%ꢒꢅ   ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ  
TM  
Micro Commercial Components  
Features  
·
·
·
Low Current Leakage  
Metalurgically Bonded Construction  
High Junction Temperature  
1 Amp Rectifier  
50 - 1000 Volts  
Maximum Ratings  
DO-41  
·
·
·
Operating Temperature: -55°C to +150°C  
Storage Temperature: -55°C to +150°C  
Typical Thermal Resistance: 25°C/W Junction to Lead at 0.375"  
Lead Length P.C.B. Mounted  
MCC  
Catalog  
Number  
Device  
Marking  
Maximum  
Recurrent  
Peak  
Reverse  
Voltage  
50V  
Maximum Maximum  
RMS  
DC  
Voltage  
Blocking  
Voltage  
D
1N4001H-T  
1N4002H-T  
1N4003H-T  
1N4004H-T  
1N4005H-T  
1N4006H-T  
1N4007H-T  
---  
---  
---  
---  
---  
---  
---  
35V  
70V  
50V  
100V  
200V  
400V  
600V  
800V  
1000V  
100V  
200V  
400V  
600V  
800V  
1000V  
A
Cathode  
140V  
280V  
420V  
560V  
700V  
Mark  
B
D
Electrical Characteristics @ 25°C Unless Otherwise Specified  
Average Forward  
Current  
IF(AV)  
1.0A  
TA = 75°C  
C
Peak Forward Surge  
Current  
IFSM  
30A  
8.3ms, half sine  
Maximum  
Instantaneous  
Forward Voltage  
Maximum DC  
Reverse Current At  
Rated DC Blocking  
Voltage  
VF  
IR  
1.1V  
IFM = 1.0A;  
TJ = 25°C*  
DIMENSIONS  
INCHES  
MIN  
.166  
.080  
.028  
MM  
MIN  
DIM  
A
B
C
D
MAX  
.205  
.107  
.034  
---  
MAX  
5.20  
2.70  
.90  
NOTE  
5.0mA  
300mA  
TJ = 25°C  
TJ = 150°C  
4.10  
2.00  
.70  
1.000  
25.40  
---  
Typical Junction  
Capacitance  
Maximum Reverse  
Recovery Time  
CJ  
15pF  
Measured at  
1.0MHz, VR=4.0V  
IF=0.5A, IR=1.0A,  
Irr=0.25A  
Trr  
2.0us  
*Pulse test: Pulse width 300 msec, Duty cycle 2%  
www.mccsemi.com  
Revision: 2  
2004/03/30  

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