1N4001H-T-B

更新时间： 2024-11-19 13:01:43

品牌	Logo	应用领域
美微科 - MCC		二极管
页数	文件大小	规格书
4页	239K
描述
Rectifier Diode,

阅读下载

中文翻译

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

1N4001H-T-B 技术参数

是否Rohs认证：	不符合	生命周期：	Obsolete
Reach Compliance Code：	unknown	ECCN代码：	EAR99
风险等级：	5.92	Is Samacsys：	N
JESD-609代码：	e0	端子面层：	Tin/Lead (Sn/Pb)
Base Number Matches：	1

1N4001H-T-B 数据手册

M C C

1N4001

THRU

1N4007

Micro Commercial Components

20736 Marilla Street Chatsworth

ꢀꢁꢂꢃꢄꢅꢄꢄ

ꢆꢇꢈꢉꢊꢋꢂꢌꢍꢄꢍ ꢂ!ꢎꢄ"#ꢃꢅꢅ

$ꢏ%ꢋꢂ ꢂ ꢂ ꢌꢍꢄꢍ ꢂ!ꢎꢄ"#ꢃꢅꢃ

Micro Commercial Components

Features

•

Halogen free available upon request by adding suffix "-HF"

•

Low Current Leakage and Low Cost

Lead Free Finish/RoHS Compliant (Note1)

Compliant. See ordering information)

Epoxy meets UL 94 V-0 flammability rating

Moisture Sensitivity Level 1

•

("P"Suffix designates

1 Amp Rectifier

50 - 1000 Volts

Maximum Ratings

•

Operating Temperature: -55°C to +150°C

Storage Temperature: -55°C to +150°C

DO-41

Typical Thermal Resistance: 35°C/W Junction to Case

25°C/W Junction to Lead at 0.375"

Lead Length P.C.B. Mounted

Maximum Maximum Maximum

MCC

Device

Catalog

Number

Marking

Recurrent

Peak

Reverse

Voltage

50V

RMS

Voltage

Blocking

Voltage

1N4001

1N4002

1N4003

1N4004

1N4005

1N4006

1N4007

35V

70V

50V

100V

200V

400V

600V

800V

1000V

1N4001

1N4002

1N4003

1N4004

1N4005

1N4006

1N4007

100V

200V

400V

600V

800V

1000V

Cathode

Mark

140V

280V

420V

560V

700V

Electrical Characteristics @ 25°C Unless Otherwise Specified

Average Forward

Current

I_F(AV)

1.0A

T_A= 75°C

Peak Forward Surge

Current

I_FSM

30A

8.3ms, half sine

Maximum Instantaneous

Forward Voltage

I_FM= 1.0A;

T = 25°C*

V_F

I_R

1.0V

DIMENSIONS

Maximum DC

Reverse Current At

Rated DC Blocking

Voltage

Typical Junction

Capacitance

INCHES

MIN

.166

.080

.028

MIN

5.0µA

50µA

T_J= 25°C

T_J= 125°C

DIM

MAX

.205

.107

.034

---

MAX

5.20

2.70

.90

NOTE

4.10

2.00

.70

C_J

T_rr

15pF

Measured at

1.0MHz, V_R=4.0V

1.000

25.40

---

Maximum Reverse

Recovery Time

2.0us

I_F=0.5A, I_R=1.0A,

I_rr=0.25A

Rating for fusing

I²t

3.7A²s

t<8.3ms

*Pulse test: Pulse width 300 µsec, Duty cycle 2%

Note: 1. High Temperature Solder Exemption Applied, see EU Directive Annex 7.

www.mccsemi.com

1 of 4

Revision: E

2013/01/01

12 3 4

中文翻译

下载PDF

与1N4001H-T-B相关器件

型号	品牌	获取价格	描述	数据表
1N4001H-TP	MCC	获取价格	Rectifier Diode, 1 Element, 1A, 50V V(RRM), Silicon, DO-41, DO-41, 2 PIN
1N4001H-T-T	MCC	获取价格	Rectifier Diode,
1N4001H-T-TP	MCC	获取价格	Rectifier Diode, 1 Element, 1A, 50V V(RRM), Silicon, DO-41, DO-41, 2 PIN
1N4001ID	NXP	获取价格	Rectifiers
1N4001ID133	NXP	获取价格	1A, 50V, SILICON, SIGNAL DIODE
1N4001ID143	NXP	获取价格	1A, 50V, SILICON, SIGNAL DIODE
1N4001IDT/R	NXP	获取价格	1A, 50V, SILICON, SIGNAL DIODE
1N4001L	DIODES	获取价格	1.0A RECTIFIER
1N4001L	GOOD-ARK	获取价格	1.0 AMP.GLASS PASSIVATED RECTIFIERS
1N4001L	HOTTECH	获取价格	SOD-123FL