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1N4001H-T-AP PDF预览

1N4001H-T-AP

更新时间: 2024-11-23 13:03:31
品牌 Logo 应用领域
美微科 - MCC 二极管
页数 文件大小 规格书
4页 239K
描述
Rectifier Diode,

1N4001H-T-AP 技术参数

是否Rohs认证: 符合生命周期:Obsolete
Reach Compliance Code:not_compliantECCN代码:EAR99
风险等级:5.84JESD-609代码:e3
端子面层:Matte Tin (Sn)Base Number Matches:1

1N4001H-T-AP 数据手册

 浏览型号1N4001H-T-AP的Datasheet PDF文件第2页浏览型号1N4001H-T-AP的Datasheet PDF文件第3页浏览型号1N4001H-T-AP的Datasheet PDF文件第4页 
M C C  
1N4001  
THRU  
1N4007  
Micro Commercial Components  
TM  
20736 Marilla Street Chatsworth  
ꢀꢁꢂꢃꢄꢅꢄꢄ  
ꢆꢇꢈꢉꢊꢋꢂꢌꢍꢄꢍ ꢂ!ꢎꢄ"#ꢃꢅꢅ  
$ꢏ%ꢋꢂ   ꢌꢍꢄꢍ ꢂ!ꢎꢄ"#ꢃꢅꢃ  
Micro Commercial Components  
Features  
Halogen free available upon request by adding suffix "-HF"  
Low Current Leakage and Low Cost  
Lead Free Finish/RoHS Compliant (Note1)  
Compliant. See ordering information)  
Epoxy meets UL 94 V-0 flammability rating  
Moisture Sensitivity Level 1  
("P"Suffix designates  
1 Amp Rectifier  
50 - 1000 Volts  
·
·
Maximum Ratings  
Operating Temperature: -55°C to +150°C  
Storage Temperature: -55°C to +150°C  
DO-41  
Typical Thermal Resistance: 35°C/W Junction to Case  
25°C/W Junction to Lead at 0.375"  
Lead Length P.C.B. Mounted  
Maximum Maximum Maximum  
MCC  
Device  
Catalog  
Number  
Marking  
Recurrent  
Peak  
Reverse  
Voltage  
50V  
RMS  
Voltage  
DC  
Blocking  
Voltage  
D
1N4001  
1N4002  
1N4003  
1N4004  
1N4005  
1N4006  
1N4007  
35V  
70V  
50V  
100V  
200V  
400V  
600V  
800V  
1000V  
1N4001  
1N4002  
1N4003  
1N4004  
1N4005  
1N4006  
1N4007  
100V  
200V  
400V  
600V  
800V  
1000V  
A
Cathode  
Mark  
140V  
280V  
420V  
560V  
700V  
B
D
Electrical Characteristics @ 25°C Unless Otherwise Specified  
Average Forward  
Current  
IF(AV)  
1.0A  
TA = 75°C  
C
Peak Forward Surge  
Current  
IFSM  
30A  
8.3ms, half sine  
Maximum Instantaneous  
Forward Voltage  
IFM = 1.0A;  
T = 25°C*  
J
VF  
IR  
1.0V  
DIMENSIONS  
Maximum DC  
Reverse Current At  
Rated DC Blocking  
Voltage  
Typical Junction  
Capacitance  
INCHES  
MIN  
.166  
.080  
.028  
MM  
MIN  
5.0µA  
50µA  
TJ = 25°C  
TJ = 125°C  
DIM  
A
B
C
D
MAX  
.205  
.107  
.034  
---  
MAX  
5.20  
2.70  
.90  
NOTE  
4.10  
2.00  
.70  
CJ  
Trr  
15pF  
Measured at  
1.0MHz, VR=4.0V  
1.000  
25.40  
---  
Maximum Reverse  
Recovery Time  
2.0us  
IF=0.5A, IR=1.0A,  
Irr=0.25A  
Rating for fusing  
I2t  
3.7A2s  
t<8.3ms  
*Pulse test: Pulse width 300 µsec, Duty cycle 2%  
Note: 1. High Temperature Solder Exemption Applied, see EU Directive Annex 7.  
www.mccsemi.com  
1 of 4  
Revision: E  
2013/01/01  

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