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1N4001GPE/100 PDF预览

1N4001GPE/100

更新时间： 2024-11-20 05:22:27
品牌 Logo 应用领域
威世 - VISHAY 二极管
页数 文件大小 规格书
2页 36K
描述
Rectifier Diode, 1 Element, 1A, 50V V(RRM), Silicon, DO-204AL, PLASTIC, DO-41, 2 PIN

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1N4001GPE/100 技术参数

是否Rohs认证： 不符合生命周期：Obsolete
零件包装代码：DO-41包装说明：PLASTIC, DO-41, 2 PIN
针数：2Reach Compliance Code：unknown
ECCN代码：EAR99HTS代码：8541.10.00.80
风险等级：5.17其他特性：METALLURGICALLY BONDED
外壳连接：ISOLATED配置：SINGLE
二极管元件材料：SILICON二极管类型：RECTIFIER DIODE
JEDEC-95代码：DO-204ALJESD-30 代码：O-PALF-W2
JESD-609代码：e0元件数量：1
端子数量：2最高工作温度：175 °C
最低工作温度：-65 °C最大输出电流：1 A
封装主体材料：PLASTIC/EPOXY封装形状：ROUND
封装形式：LONG FORM峰值回流温度（摄氏度）：NOT SPECIFIED
认证状态：Not Qualified最大重复峰值反向电压：50 V
最大反向恢复时间：2 µs表面贴装：NO
端子面层：TIN LEAD端子形式：WIRE
端子位置：AXIAL处于峰值回流温度下的最长时间：NOT SPECIFIED
Base Number Matches：1

1N4001GPE/100 数据手册

 浏览型号1N4001GPE/100的Datasheet PDF文件第2页 
1N4001GP thru 1N4007GP  
Vishay Semiconductors  
formerly General Semiconductor  
Glass Passivated Junction Rectifier  
Reverse Voltage  
50 to 1000V  
Forward Current 1.0A  
DO-204AL  
(DO-41)  
Features  
1.0 (25.4)  
MIN.  
• Plastic package has Underwriters Laboratories  
Flammability Classification 94V-0  
0.107 (2.7)  
0.080 (2.0)  
DIA.  
• High temperature metallurgically bonded construction  
• Cavity-free glass passivated junction  
• Capable of meeting environmental standards of  
MIL-S-19500  
0.205 (5.2)  
0.160 (4.1)  
• 1.0 Ampere operation at TA = 75°C with no thermal  
runaway  
• Typical IR less than 0.1µA  
®
• High temperature soldering guaranteed: 350°C/10 seconds,  
0.375" (9.5mm) lead length, 5 lbs. (2.3kg) tension  
1.0 (25.4)  
MIN.  
Mechanical Data  
Case: JEDEC DO-204AL, molded plastic over glass body  
0.034 (0.86)  
0.028 (0.71)  
DIA.  
Terminals: Plated axial leads, solderable per  
MIL-STD-750, Method 2026  
0.026 (0.66)  
0.023 (0.58)  
NOTE: Lead diameter is  
for suffix "E" part numbers  
Polarity: Color band denotes cathode end  
Mounting Position: Any  
Dimensions in inches and (millimeters)  
*Glass-plastic encapsulation technique is covered by  
Patent No. 3,996,602, and brazed-lead assembly by Patent No. 3,930,306  
Weight: 0.012 oz., 0.3 g  
Maximum Ratings & Thermal Characteristics Ratings at 25°C ambient temperature unless otherwise specified.  
1N  
1N  
1N  
1N  
1N  
1N  
1N  
Parameter  
Symbol  
Unit  
4001GP 4002GP 4003GP 4004GP 4005GP 4006GP 4007GP  
Maximum repetitive peak reverse voltage  
* Maximum RMS voltage  
VRRM  
VRMS  
VDC  
50  
35  
50  
100  
70  
200  
140  
200  
400  
280  
400  
600  
420  
600  
800 1000  
560 700  
800 1000  
V
V
V
* Maximum DC blocking voltage  
100  
* Maximum average forward rectified current  
0.375" (9.5mm) lead length at TA = 75°C  
IF(AV)  
IFSM  
1.0  
30  
30  
A
A
* Peak forward surge current 8.3ms single half sine-wave  
superimposed on rated load (JEDEC Method)  
* Maximum full load reverse current, full cycle  
average 0.375" (9.5mm) lead length TA = 75°C  
IR(AV)  
µA  
RθJA  
RθJL  
55  
25  
(Note 1)  
Typical thermal resistance  
°C/W  
°C  
* Operating junction and storage temperature range  
TJ, TSTG  
–65 to +175  
Electrical Characteristics Ratings at 25°C ambient temperature unless otherwise specified.  
Maximum instantaneous forward voltage at 1.0A  
VF  
1.1  
V
* Maximum DC reverse current  
at rated DC blocking voltage  
TA = 25°C  
TA = 125°C  
5.0  
50  
IR  
µA  
Typical reverse recovery time at  
IF = 0.5A, IR = 1.0A, Irr = 0.25A  
trr  
2.0  
µs  
Typical junction capacitance at 4.0V, 1MHz  
CJ  
8.0  
pF  
Notes: (1) Thermal resistance from junction to ambient at 0.375” (9.5mm) lead length, P.C.B. mounted  
*JEDEC registered values  
Document Number 88504  
08-Jul-03  
www.vishay.com  
1
12

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 		Rectifier Diode, 1 Element, 1A, 50V V(RRM), Silicon, DO-204AL, PLASTIC, DO-41, 2 PIN

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