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1N4001GP_17 PDF预览

1N4001GP_17

更新时间: 2024-11-24 01:02:07
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德欧泰克 - DIOTEC /
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2页 154K
描述
Standard Recovery Rectifier Diodes

1N4001GP_17 数据手册

 浏览型号1N4001GP_17的Datasheet PDF文件第2页 
1N4001GP ... 1N4007GP, 1N4001-Q ... 1N4007-Q  
IFAV = 1 A  
VF < 1.1 V  
Tjmax = 175°C trr  
VRRM = 50...1000 V  
IFSM = 27/30 A  
1N4001GP ... 1N4007GP, 1N4001-Q ... 1N4007-Q  
Standard Recovery Rectifier Diodes  
Gleichrichterdioden mit Standard-Sperrverzug  
~ 1500 ns  
Version 2017-06-16  
Typical Application  
~DO-41 / ~DO-204AC  
Typische Anwendung  
50/60 Hz Netzgleichrichtung,  
Stromversorgungen, Verpolschutz  
Sonderausführung 1)  
50/60 Hz Mains Rectification,  
Power Supplies, Polarity Protection  
Special grade 1)  
Version -Q: AEC-Q101 compliant 1)  
Version -Q: AEC-Q101 konform 1)  
Ø 2.6±0.2  
Features  
Besonderheit  
Glaspassivierte Sperrschicht  
Konform zu RoHS, REACH,  
Konfliktmineralien 1)  
Glass passivated junction  
Compliant to RoHS, REACH,  
Conflict Minerals 1)  
R
V
Mechanical Data 1)  
Mechanische Daten 1)  
Gegurtet in Ammo-Pack  
Gewicht ca.  
Taped in ammo pack  
5000  
0.4 g  
Ø 0.77±0.07  
Weight approx.  
Case material  
UL 94V-0  
260°C/10s  
MSL N/A  
Gehäusematerial  
Solder & assembly conditions  
Löt- und Einbaubedingungen  
Dimensions - Maße [mm]  
Maximum ratings 2)  
Grenzwerte 2)  
Type  
Typ  
Repetitive peak reverse voltage  
Periodische Spitzensperrspannung  
VRRM [V]  
Surge peak reverse voltage  
Stoßspitzensperrspannung  
VRSM [V]  
1N4001GP / 1N4001-Q  
1N4002GP / 1N4002-Q  
1N4004GP / 1N4004-Q  
1N4005GP / 1N4005-Q  
1N4007GP / 1N4007-Q  
50  
100  
50  
100  
400  
400  
600  
600  
1000  
1000  
Max. average forward rectified current, R-load  
Dauergrenzstrom in Einwegschaltung mit R-Last  
TA = 75°C  
TA = 100°C  
1 A 3)  
IFAV  
IFRM  
IFSM  
i2t  
0.8 A 3)  
Repetitive peak forward current  
Periodischer Spitzenstrom  
f > 15 Hz  
5.4 A 3)  
Peak forward surge current  
Stoßstrom in Fluss-Richtung  
Half sine-wave  
Sinus-Halbwelle  
50 Hz (10 ms)  
60 Hz (8.3 ms)  
27 A  
30 A  
Rating for fusing  
Grenzlastintegral  
t < 10 ms  
3.6 A2s  
Junction temperature – Sperrschichttemperatur  
Storage temperature – Lagerungstemperatur  
Tj  
TS  
-50...+175°C  
-50...+175°C  
1
Please note the detailed information on our website or at the beginning of the data book  
Bitte beachten Sie die detaillierten Hinweise auf unserer Internetseite bzw. am Anfang des Datenbuches  
TA = 25°C unless otherwise specified – TA = 25°C wenn nicht anders angegeben  
Valid, if leads are kept at ambient temperature at a distance of 10 mm from case  
2
3
Gültig, wenn die Anschlussdrähte in 10 mm Abstand vom Gehäuse auf Umgebungstemperatur gehalten werden  
© Diotec Semiconductor AG  
http://www.diotec.com/  
1
 
 
 

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