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1N4001GP-E3 PDF预览

1N4001GP-E3

更新时间: 2024-11-19 14:39:07
品牌 Logo 应用领域
威世 - VISHAY 二极管
页数 文件大小 规格书
4页 329K
描述
Rectifier Diode, 1 Element, 1A, 50V V(RRM), Silicon, DO-204AL, LEAD FREE, PLASTIC, DO-41, 2 PIN

1N4001GP-E3 技术参数

是否Rohs认证:符合生命周期:Obsolete
零件包装代码:DO-41包装说明:LEAD FREE, PLASTIC, DO-41, 2 PIN
针数:2Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.10.00.80
风险等级:5.26Is Samacsys:N
其他特性:FREE WHEELING DIODE, LOW LEAKAGE CURRENT外壳连接:ISOLATED
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODEJEDEC-95代码:DO-204AL
JESD-30 代码:O-PALF-W2JESD-609代码:e3
元件数量:1端子数量:2
最大输出电流:1 A封装主体材料:PLASTIC/EPOXY
封装形状:ROUND封装形式:LONG FORM
峰值回流温度(摄氏度):NOT APPLICABLE认证状态:Not Qualified
最大重复峰值反向电压:50 V最大反向恢复时间:2 µs
表面贴装:NO端子面层:MATTE TIN
端子形式:WIRE端子位置:AXIAL
处于峰值回流温度下的最长时间:NOT APPLICABLEBase Number Matches:1

1N4001GP-E3 数据手册

 浏览型号1N4001GP-E3的Datasheet PDF文件第2页浏览型号1N4001GP-E3的Datasheet PDF文件第3页浏览型号1N4001GP-E3的Datasheet PDF文件第4页 
1N4001GP thru 1N4007GP  
Vishay General Semiconductor  
Glass Passivated Junction Rectifier  
Major Ratings and Characteristics  
®
IF(AV)  
VRRM  
IFSM  
IR  
1.0 A  
50 V to 1000 V  
30 A  
5.0 µA  
*
VF  
1.1 V  
d
e
t
n
e
Tj max.  
175 °C  
t
a
P
* Glass-plastic encapsulation  
technique is covered by  
Patent No. 3,996,602,  
DO-204AL (DO-41)  
brazed-lead assembly  
by Patent No. 3,930,306  
Features  
Mechanical Data  
• Superectifier structure for High Reliability  
application  
Case: DO-204AL, molded epoxy over glass body  
Epoxy meets UL-94V-0 Flammability rating  
• Cavity-free glass-passivated junction  
• Low forward voltage drop  
Terminals: Matte tin plated leads, solderable per  
J-STD-002B and JESD22-B102D  
E3 suffix for commercial grade, HE3 suffix for high  
reliability grade (AEC Q101 qualified)  
Polarity: Color band denotes cathode end  
• Low leakage current, typical I less than 0.1 µA  
• High forward surge capability  
R
• Meets environmental standard MIL-S-19500  
• Solder Dip 260 °C, 40 seconds  
Typical Applications  
For use in general purpose rectification of power sup-  
plies, inverters, converters and freewheeling diodes  
for both consumer and automotive applications  
Maximum Ratings  
(TA = 25 °C unless otherwise noted)  
Parameter  
Symbol 1N4001GP 1N4002GP 1N4003GP 1N4004GP 1N4005GP 1N4006GP 1N4007GP Unit  
Maximum repetitive peak  
reverse voltage  
VRRM  
50  
100  
200  
400  
600  
800  
1000  
V
* Maximum RMS voltage  
VRMS  
VDC  
35  
50  
70  
140  
200  
280  
400  
420  
600  
560  
800  
700  
V
V
* Maximum DC blocking  
voltage  
100  
1000  
* Maximum average forward  
rectified current 0.375"  
(9.5 mm) lead length  
at TA = 75 °C  
IF(AV)  
1.0  
A
* Peak forward surge current  
8.3 ms single half sine-wave  
superimposed on rated load  
IFSM  
30  
30  
A
* Maximum full load reverse  
current, full cycle average  
0.375" (9.5 mm) lead length  
TA = 75 °C  
IR(AV)  
µA  
* Operating junction and  
TJ, TSTG  
- 65 to + 175  
°C  
storage temperature range  
Document Number 88504  
14-Sep-05  
www.vishay.com  
1

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