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1N4001-BC02 PDF预览

1N4001-BC02

更新时间: 2024-11-19 14:39:07
品牌 Logo 应用领域
美微科 - MCC 二极管
页数 文件大小 规格书
3页 97K
描述
Rectifier Diode, 1 Element, 1A, 50V V(RRM), Silicon, DO-41, DO-41, 2 PIN

1N4001-BC02 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:DO-41包装说明:O-XALF-W2
针数:2Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.10.00.80
风险等级:5.09其他特性:METALLURGICALLY BONDED
外壳连接:ISOLATED配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
JEDEC-95代码:DO-41JESD-30 代码:O-XALF-W2
JESD-609代码:e0元件数量:1
端子数量:2最大输出电流:1 A
封装主体材料:UNSPECIFIED封装形状:ROUND
封装形式:LONG FORM峰值回流温度(摄氏度):NOT SPECIFIED
认证状态:Not Qualified最大重复峰值反向电压:50 V
表面贴装:NO端子面层:TIN LEAD
端子形式:WIRE端子位置:AXIAL
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

1N4001-BC02 数据手册

 浏览型号1N4001-BC02的Datasheet PDF文件第2页浏览型号1N4001-BC02的Datasheet PDF文件第3页 
M C C  
1N4001-BC02  
THRU  
1N4007-BC02  
ꢀꢁꢂꢃꢄꢅꢆꢄꢇꢇꢈꢃꢂꢁꢉꢊꢅꢆomponents  
20736 Marilla Street Chatsworth  
ꢆꢋꢅꢌꢍꢎꢍꢍ  
ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ  
$ꢉ%ꢒꢅ   ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ  
Features  
·
·
·
Low Current Leakage  
Metalurgically Bonded Construction  
Low Cost  
1 Amp Rectifier  
50 to 1000 Volts  
Maximum Ratings  
·
·
·
Operating Temperature: -50°C to +125°C  
DO-41  
(Lead Cut Bend)  
Storage Temperature: -50°C to +150°C  
Maximum Thermal Resistance; 20°C/W Junction To Lead  
MCC  
Catalog  
Number  
Device  
Marking  
Maximum  
Recurrent  
Peak  
Reverse  
Voltage  
50V  
100V  
200V  
400V  
600V  
800V  
1000V  
Maximum Maximum  
D
B
F
E
RMS  
DC  
Voltage  
Blocking  
Voltage  
1N4001-BC02  
1N4002-BC02  
1N4003-BC02  
1N4004-BC02  
1N4005-BC02  
1N4006-BC02  
1N4007-BC02  
---  
---  
---  
---  
---  
---  
---  
35V  
70V  
50V  
100V  
200V  
400V  
600V  
800V  
1000V  
140V  
280V  
420V  
560V  
700V  
A
C
Electrical Characteristics @ 25°C Unless Otherwise Specified  
Average Forward  
Current  
IF(AV)  
1.0A  
TA = 75°C  
Peak Forward Surge  
Current  
IFSM  
30A  
8.3ms, half sine  
DIMENSIONS  
Maximum  
INCHES  
MIN  
.480  
.170  
.166  
.080  
.028  
.020  
MM  
MIN  
Instantaneous  
Forward Voltage  
Maximum DC  
Reverse Current At  
Rated DC Blocking  
Voltage  
VF  
IR  
1.1V  
IFM = 1.0A;  
TJ = 25°C*  
DIM  
A
B
C
D
MAX  
.50  
MAX  
12.7  
4.82  
5.20  
2.70  
.90  
NOTE  
12.2  
4.30  
4.10  
2.00  
.70  
.190  
.205  
.107  
.034  
.040  
5.0mA  
50mA  
TJ = 25°C  
TJ = 125°C  
E
F
0.50  
1.01  
Typical Junction  
Capacitance  
CJ  
15pF  
Measured at  
1.0MHz, VR=4.0V  
*Pulse test: Pulse width 300 msec, Duty cycle 2%  
www.mccsemi.com  
Revision: 3  
2002/12/31  

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