Datasheet > 1N3890UR-1TR

1N3890UR-1TR

更新时间： 2024-02-28 10:52:15

品牌	Logo	应用领域
美高森美 - MICROSEMI		二极管齐纳二极管
页数	文件大小	规格书
3页	275K
描述
SILICON 1 WATT ZENER DIODES

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中文翻译

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数据手册

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1N3890UR-1TR 数据手册

1N3821 thru 1N3830A

1 Watt Metal Case Zener Diodes

S C O T T S D A L E D I V I S I O N

DESCRIPTION

APPEARANCE

This well established zener diode series for the 1N3821 thru 1N3830A

JEDEC registration in the glass hermetic sealed DO-13 package provides a

low voltage selection for 3.3 to 7.5 volts. It is also well suited for high-

reliability applications where it is available in JAN, JANTX, and JANTXV

military qualifications. Higher voltages are also available in the 1N3016

thru 1N3051 series (6.8 V to 200 V) in the same package (see separate

data sheet). Microsemi also offers numerous other Zener diode products

for a variety of other packages including surface mount.

DO-13

(DO-202AA)

IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com

FEATURES

APPLICATIONS / BENEFITS

•

Zener Voltage Range: 3.3 V to 7.5 V

Hermetically sealed DO-13 metal package

Internally solder-bonded construction.

Also available in JAN, JANTX, JANTXV

qualifications per MIL-PRF19500/115 by adding the

JAN, JANTX, or JANTXV prefixes to part numbers

for desired level of screening, e.g. JANTX1N3821,

JANTXV1N3051A, etc.

•

Regulates voltage over a broad operating current

and temperature range

•

Low voltage selection from 3.3 to 7.5 V

Tight voltage tolerances available

Low reverse (leakage) currents

Nonsensitive to ESD

Hermetically sealed metal package

Inherently radiation hard as described in Microsemi

•

Surface mount also available with 1N3821UR-1

MicroNote 050

thru 1N30330AUR-1 series on separate data sheet

MAXIMUM RATINGS

MECHANICAL AND PACKAGING

•

Operating Junction and Storage Temperatures:

•

CASE: DO-13 (DO-202AA), welded, hermetically

-65^oC to +175^oC

sealed metal and glass

THERMAL RESISTANCE: 50^oC/W* junction to lead

at 0.375 inches (10 mm) from body or 110 ^oC/W

junction to ambient when leads are mounted on FR4

PC board with 4 mm²copper pads (1 oz) and track

width 1 mm, length 25 mm

FINISH: All external surfaces are Tin-Lead (Pb/Sn)

plated and solderable per MIL-STD-750 method

2026

POLARITY: Cathode connected case.

WEIGHT: 1.4 grams.

•

DC Power Dissipation*: 1 Watt at T_L< +125^oC 3/8”

(10 mm) from body or 1.0 Watts at T_L< +65^oC when

mounted on FR4 PC board as described for thermal

resistance above (also see Fig 1)

Tape & Reel option: Standard per EIA-296 (add

“TR” suffix to part number)

•

See package dimensions on last page

•

Forward Voltage @ 200 mA: 1.5 Volts.

Solder Temperatures: 260 ^oC for 10 s (maximum)

* For further mounting reference, thermal resistance from junction to metal case may be reduced to < 20 C/W

when mounting DO-13 metal case directly on heat sink.

Microsemi

Scottsdale Division

Page 1

11-06-2003 REV A

8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503

12 3

中文翻译

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与1N3890UR-1TR相关器件

型号	品牌	获取价格	描述	数据表
1N3891	MICROSEMI	获取价格	Fast Recovery Rectifier
1N3891	INFINEON	获取价格	6A, 12A AND 16A FAST RECOVERY RECTIFIERS
1N3891	VISHAY	获取价格	Fast Recovery Diodes(Stud Version)
1N3891	NJSEMI	获取价格	STUD MOUNTED FAST RECOVERY POWER RECTIFIERS
1N3891	AMERICASEMI	获取价格	High Power- Fast Recovery Rectifiers
1N3891A	MOTOROLA	获取价格	12 A, 200 V, SILICON, RECTIFIER DIODE, DO-203AA
1N3891A	NJSEMI	获取价格	SILICON POWER RECTIFIER
1N3891A	MICROSEMI	获取价格	Fast Recovery Rectifier
1N3891AE3	MICROSEMI	获取价格	Rectifier Diode, 1 Phase, 1 Element, 20A, 200V V(RRM), Silicon, DO-203AA, DO-4, 1 PIN
1N3891AR	MICROSEMI	获取价格	HIGH RELIABILITY FAST RECOVERY RECTIFIER

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