Datasheet > 1N3890AUR-1TR

1N3890AUR-1TR

更新时间： 2024-11-30 22:37:31

品牌	Logo	应用领域
美高森美 - MICROSEMI		二极管齐纳二极管
页数	文件大小	规格书
3页	275K
描述
SILICON 1 WATT ZENER DIODES

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中文翻译

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1N3890AUR-1TR 数据手册

1N3821 thru 1N3830A

1 Watt Metal Case Zener Diodes

S C O T T S D A L E D I V I S I O N

DESCRIPTION

APPEARANCE

This well established zener diode series for the 1N3821 thru 1N3830A

JEDEC registration in the glass hermetic sealed DO-13 package provides a

low voltage selection for 3.3 to 7.5 volts. It is also well suited for high-

reliability applications where it is available in JAN, JANTX, and JANTXV

military qualifications. Higher voltages are also available in the 1N3016

thru 1N3051 series (6.8 V to 200 V) in the same package (see separate

data sheet). Microsemi also offers numerous other Zener diode products

for a variety of other packages including surface mount.

DO-13

(DO-202AA)

IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com

FEATURES

APPLICATIONS / BENEFITS

•

Zener Voltage Range: 3.3 V to 7.5 V

Hermetically sealed DO-13 metal package

Internally solder-bonded construction.

Also available in JAN, JANTX, JANTXV

qualifications per MIL-PRF19500/115 by adding the

JAN, JANTX, or JANTXV prefixes to part numbers

for desired level of screening, e.g. JANTX1N3821,

JANTXV1N3051A, etc.

•

Regulates voltage over a broad operating current

and temperature range

•

Low voltage selection from 3.3 to 7.5 V

Tight voltage tolerances available

Low reverse (leakage) currents

Nonsensitive to ESD

Hermetically sealed metal package

Inherently radiation hard as described in Microsemi

•

Surface mount also available with 1N3821UR-1

MicroNote 050

thru 1N30330AUR-1 series on separate data sheet

MAXIMUM RATINGS

MECHANICAL AND PACKAGING

•

Operating Junction and Storage Temperatures:

•

CASE: DO-13 (DO-202AA), welded, hermetically

-65^oC to +175^oC

sealed metal and glass

THERMAL RESISTANCE: 50^oC/W* junction to lead

at 0.375 inches (10 mm) from body or 110 ^oC/W

junction to ambient when leads are mounted on FR4

PC board with 4 mm²copper pads (1 oz) and track

width 1 mm, length 25 mm

FINISH: All external surfaces are Tin-Lead (Pb/Sn)

plated and solderable per MIL-STD-750 method

2026

POLARITY: Cathode connected case.

WEIGHT: 1.4 grams.

•

DC Power Dissipation*: 1 Watt at T_L< +125^oC 3/8”

(10 mm) from body or 1.0 Watts at T_L< +65^oC when

mounted on FR4 PC board as described for thermal

resistance above (also see Fig 1)

Tape & Reel option: Standard per EIA-296 (add

“TR” suffix to part number)

•

See package dimensions on last page

•

Forward Voltage @ 200 mA: 1.5 Volts.

Solder Temperatures: 260 ^oC for 10 s (maximum)

* For further mounting reference, thermal resistance from junction to metal case may be reduced to < 20 C/W

when mounting DO-13 metal case directly on heat sink.

Microsemi

Scottsdale Division

Page 1

11-06-2003 REV A

8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503

12 3

中文翻译

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与1N3890AUR-1TR相关器件

型号	品牌	获取价格	描述	数据表
1N3890E3	MICROSEMI	获取价格	Rectifier Diode, 1 Phase, 1 Element, 20A, 100V V(RRM), Silicon, DO-203AA, DO-4, 1 PIN
1N3890M	INFINEON	获取价格	Rectifier Diode, 1 Phase, 1 Element, 12A, 100V V(RRM), Silicon, DO-203AA,
1N3890PBF	INFINEON	获取价格	Rectifier Diode, 1 Phase, 1 Element, 12A, 100V V(RRM), Silicon, DO-203AA, DO-4, 1 PIN
1N3890R	INFINEON	获取价格	6A, 12A AND 16A FAST RECOVERY RECTIFIERS
1N3890R	MICROSEMI	获取价格	HIGH RELIABILITY FAST RECOVERY RECTIFIER
1N3890R	NJSEMI	获取价格	Fast Rectifier, 10A < I(O)/I(F) s 20A
1N3890R	AMERICASEMI	获取价格	High Power- Fast Recovery Rectifiers
1N3890RA	MOTOROLA	获取价格	12A, 100V, SILICON, RECTIFIER DIODE, DO-203AA
1N3890RM	INFINEON	获取价格	Rectifier Diode, 1 Phase, 1 Element, 12A, 100V V(RRM), Silicon, DO-203AA,
1N3890RPBF	INFINEON	获取价格	Rectifier Diode, 1 Phase, 1 Element, 12A, 100V V(RRM), Silicon, DO-203AA, DO-4, 1 PIN

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